Transistor having elevated drain finger termination
According to an exemplary implementation, a transistor includes drain finger electrodes interdigitated with source finger electrodes. The transistor also includes a current conduction path in a semiconductor substrate between the drain finger electrodes and the source finger electrodes. At least one of the drain finger electrodes has a drain finger electrode end and a drain finger electrode main body, where the drain finger electrode main body is non-coplaner with at least a portion of the drain finger electrode end. The transistor may also include a dielectric material situated between at least a portion of the drain finger electrode end and the semiconductor substrate. The dielectric material can be an increasing thickness dielectric material. The dielectric material can thus elevate the drain finger electrode end over the semiconductor substrate. Further, the drain finger electrode end can have an increased radius of curvature.
1. A transistor comprising:
drain finger electrodes interdigitated with source finger electrodes;
current conduction paths in a semiconductor substrate between said drain finger electrodes and said source finger electrodes;
at least one of said drain finger electrodes having a drain finger electrode main body and a drain finger electrode end, wherein at least a portion of said drain finger end is non-coplanar with said drain finger electrode main body.
2. The transistor of claim 1 , wherein a dielectric material is situated between said drain finger electrode end and said semiconductor substrate.
3. The transistor of claim 2 , wherein said dielectric material elevates said drain finger electrode end over said semiconductor substrate.
4. The transistor of claim 1 , wherein said drain finger electrode main body is situated on said semiconductor substrate.
5. The transistor of claim 1 , wherein said drain finger electrode end has an increased radius of curvature.
6. The transistor of claim 1 , wherein at least one of said source finger electrodes has a source finger electrode main body coupled to a source pad, said drain finger electrode end extending beyond said source finger electrode main body.
7. The transistor of claim 1 , wherein said drain finger electrodes are longer than said source finger electrodes.
8. The transistor of claim 1 , wherein said transistor is a high-electron-mobility transistor (HEMT).
9. The transistor of claim 1 , wherein said transistor comprises a group III-V transistor.
10. A transistor comprising:
drain finger electrodes interdigitated with source finger electrodes;
a gate region configured to control current conduction in a semiconductor substrate between said drain finger electrodes and said source finger electrodes;
at least one of said drain finger electrodes having a drain finger electrode end and a drain finger electrode main body, wherein at least a portion of said drain finger end is non-coplanar with said drain finger electrode main body;
wherein an increasing thickness dielectric material is situated between at least said portion of said drain finger electrode end and said semiconductor substrate.
11. The transistor of claim 10 , wherein said increasing thickness dielectric material elevates said drain finger electrode end over said semiconductor substrate.
12. The transistor of claim 10 , wherein said drain finger electrode end is substantially an ellipsoid.
13. The transistor of claim 10 , wherein said drain finger electrode is a tapered drain finger electrode.
14. The transistor of claim 10 , wherein said transistor is a high-electron-mobility transistor (HEMT).