IP Library Granted Patent US 10,096,462
Granted Patent B2
US 10,096,462 · App. 13/941,836 · Granted Oct 9, 2018

Substrate processing method and storage medium

Inventors: Hidekazu Hayashi (Yokkaichi, JP); Yohei Sato (Yokkaichi, JP); Hisashi Okuchi (Yokkaichi, JP); Hiroshi Tomita (Yokohama, JP); Kazuyuki Mitsuoka (Nirasaki, JP); Gen You (Nirasaki, JP); Hiroki Ohno (Nirasaki, JP); Takehiko Orii (Nirasaki, JP); Takayuki Toshima (Koshi, JP)
Assignees: Toshiba Memory Corporation; Tokyo Electron Limited
H01L21/02101B08B7/0021H01L21/02041H01L21/02057H01L21/67017H01L21/67051H01L21/67109
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Quick Facts
Patent No.
US 10,096,462
App. No.
13/941,836
Granted
Oct 9, 2018
Kind
B2
Abstract

A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container. Thereafter, a fluid in the state of a high-pressure fluid or a gas is discharged from the processing container to obtain the substrate in the dried state.

Claims (15)

1. A substrate processing method for removing a fluorine-containing organic solvent, which has been supplied to a surface of a substrate, having a pattern formed in the surface, after processing of the substrate with a liquid and which covers the surface of the substrate, from the surface of the substrate by bringing the solvent into contact with a high-pressure fluid, said method comprising the steps of:

carrying the substrate to a processing container, the surface of the substrate being covered with a first fluorine-containing organic solvent, the first fluorine-containing organic solvent having a first boiling point, the first boiling point being one of 165° C. or 174° C., and evaporating, while the substrate is being carried to the processing container, only an amount of the first fluorine-containing organic solvent from the substrate, the amount maintaining, for a selected amount of time, while the substrate is being carried to the processing container, the surface of the substrate wet with the first fluorine-containing organic solvent, the selected amount of time being based on a selected volume of the first fluorine-containing organic solvent necessary to cover the surface of the substrate, the size of the substrate, and the first boiling point;

forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, the second fluorine-containing organic solvent having a second boiling point, the second boiling point being lower than the first boiling point of the first fluorine-containing organic solvent, and a critical temperature, the critical temperature of the second fluorine-containing organic solvent being higher than the first boiling point of the first fluorine-containing organic solvent, and forming a supercritical fluid at a critical temperature which prevents release of fluorine atoms due to decomposition of the first and second fluorine-containing organic solvents, in the processing container;

supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container, or by supplying a gas or liquid of the second fluorine-containing organic solvent into the processing container and then heating the gas or liquid to a temperature not less than the critical temperature of the second fluorine-containing organic solvent to turn the gas or liquid into a high-pressure fluid; and then

discharging a fluid in the state of a high-pressure fluid or a gas from the processing container.

2. The substrate processing method according to claim 1 , wherein the high-pressure fluid atmosphere of the mixture is formed in the processing container when stopping the supply of the second fluorine-containing organic solvent.

3. The substrate processing method according to claim 1 , wherein the critical temperature of the second fluorine-containing organic solvent is not more than 200° C.

4. The substrate processing method according to claim 1 , wherein a mol-based mixing ratio of the first fluorine-containing organic solvent to the second fluorine-containing organic solvent is not more than 1/10.

5. The substrate processing method according to claim 1 , wherein an internal temperature of the processing container in the step of forming a high-pressure fluid atmosphere of the mixture is so determined as to make the content of fluorine, generated by decomposition of the fluorine-containing organic solvents of the mixture, in the fluid discharged from the processing container not more than 100 weight ppm.

6. A non-transitory storage medium storing a computer program for use in a substrate processing apparatus for removing a fluorine-containing organic solvent, which has been supplied to a surface of a substrate having a pattern formed in the surface, by bringing the solvent into contact with a high-pressure fluid, wherein said program contains steps to perform the substrate processing method according to claim 1 .

7. A substrate processing method for removing a fluorine-containing organic solvent, which has been supplied to a surface of a substrate, having a pattern formed in the surface, after processing of the substrate with a liquid and which covers the surface of the substrate, from the surface of the substrate by bringing the solvent into contact with a high-pressure fluid, said method comprising the steps of:

carrying the substrate to a processing container, the surface of the substrate being covered with a first fluorine-containing organic solvent, the first fluorine-containing organic solvent having a first boiling point, the first fluorine-containing organic solvent being PFC, and evaporating, while the substrate is being carried to the processing container, only an amount of the first fluorine-containing organic solvent from the substrate, the amount maintaining, for a selected amount of time, while the substrate is being carried to the processing container, the surface of the substrate wet with the first fluorine-containing organic solvent, the selected amount of time being based on a selected volume of the first fluorine-containing organic solvent necessary to cover the surface of the substrate, the size of the substrate, and the first boiling point;

forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, the second fluorine-containing organic solvent having a second boiling point the second boiling point being lower than the first boiling point of the first fluorine-containing organic solvent, and a critical temperature, the critical temperature of the second fluorine-containing organic solvent being higher than the first boiling point of the first fluorine-containing organic solvent, and forming a supercritical fluid at a critical temperature which prevents release of fluorine atoms due to decomposition of the first and second fluorine-containing organic solvents, in the processing container;

supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container, or by supplying a gas or liquid of the second fluorine-containing organic solvent into the processing container and then heating the gas or liquid to a temperature not less than the critical temperature of the second fluorine-containing organic solvent to turn the gas or liquid into a high-pressure fluid; and then

discharging a fluid in the state of a high-pressure fluid or a gas from the processing container.

Assignments (5)
CHANGE OF NAME Recorded Feb 11, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 059039/0123 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 1, 2022
From: K.K.PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058922/0308 →
MERGER Recorded Jan 20, 2022
From: TOSHIBA MEMORY CORPORATION
To: K.K.PANGEA
Reel/Frame 058788/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043435/0684 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 15, 2013
From: HAYASHI, HIDEKAZU; SATO, YOHEI; OKUCHI, HISASHI; TOMITA, HIROSHI; MITSUOKA, KAZUYUKI; YOU, GEN; OHNO, HIROKI; ORII, TAKEHIKO; TOSHIMA, TAKAYUKI
To: KABUSHIKI KAISHA TOSHIBA; TOKYO ELECTRON LIMITED
Reel/Frame 030796/0758 →
Priority Claims (1)
JP 2012-159850 · Jul 18, 2012 · national
Continuity (1)
Related Publication 20140020721A1 · Jan 23, 2014