IP Library Granted Patent US 8,837,087
Granted Patent B2
US 8,837,087 · App. 13/946,938 · Granted Sep 16, 2014

Thin magnetic film, method of manufacturing the same, and high frequency oscillator, magnetic head, magnetic recording medium, and magnetic recording/reproducing apparatus using thin magnetic film

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Quick Facts
Patent No.
US 8,837,087
App. No.
13/946,938
Granted
Sep 16, 2014
Kind
B2
Abstract

According to one embodiment, there is provided a thin magnetic film having a negative anisotropy of −6×10 6 erg/cm 3 or less and including, on at least a nonmagnetic substrate, at least one seed layer made of a metal or metal compound, a ruthenium underlayer for controlling the orientation of an immediately overlying layer, and a magnetic layer having negative anisotropy in the normal line direction perpendicular to a surface of the magnetic layer and mainly containing Co and Ir, wherein the additive element concentration of Ir in the magnetic layer is 10 (inclusive) to 45 (inclusive) at %.

Claims (54)

1. A thin magnetic film comprising:

a nonmagnetic substrate;

a ruthenium underlayer formed on the nonmagnetic substrate; and

a magnetic layer formed in contact with the ruthenium underlayer, having a negative anisotropy of −6×10 6 to −1.2×10 7 erg/cm 3 (−6×10 8 to −1.2×10 9 nJ/cm 3 ) in a normal line direction perpendicular to a surface of the magnetic layer, and mainly containing Co 1-x Ir x (x=10 to 45 at %).

2. The film according to claim 1 , wherein the ruthenium underlayer is annealed at a temperature of 400° C. (inclusive) to 650° C. (exclusive).

3. The film according to claim 1 , further comprising, between the nonmagnetic substrate and the ruthenium underlayer, a seed layer made of at least one material selected from the group consisting of tantalum, platinum, titanium, and nickel.

4. A thin magnetic film manufacturing method comprising:

forming a ruthenium underlayer on a nonmagnetic substrate;

annealing the ruthenium underlayer at a temperature of 400° C. (inclusive) to 650° C. (exclusive); and

forming a magnetic layer mainly containing Co 1-x Ir x (x=10 to 45 at %), in contact with the annealed ruthenium underlayer.

5. The method according to claim 4 , further comprising, before the forming the ruthenium underlayer on the nonmagnetic substrate, forming a seed layer made of at least one material selected from the group consisting of tantalum, platinum, titanium, and nickel.

6. A high frequency oscillator comprising:

a first electrode;

a ruthenium underlayer formed on the first electrode;

a first magnetic layer formed in contact with the ruthenium underlayer, having a negative anisotropy of −6×10 6 to −1.2×10 7 erg/cm 3 (−6×10 8 to −1.2×10 9 nJ/cm 3 ) in a normal line direction perpendicular to a surface of the first magnetic layer, and mainly containing Co 1-x Ir x (x=10 to 45 at %);

a nonmagnetic interlayer formed on the first magnetic layer;

a second magnetic layer formed on the nonmagnetic interlayer, having perpendicular magnetic anisotropy, and containing at least one magnetic material selected from the group consisting of iron, cobalt, and nickel; and

a second electrode formed on the second magnetic layer.

7. The oscillator according to claim 6 , wherein the ruthenium underlayer is annealed at a temperature of 400° C. (inclusive) to 650° C. (exclusive).

8. The oscillator according to claim 6 , further comprising, between the nonmagnetic substrate and the ruthenium underlayer, a seed layer made of at least one material selected from the group consisting of tantalum, platinum, titanium, and nickel.

9. A magnetic head comprising:

a main magnetic pole;

a recording magnetic pole forming a magnetic circuit together with the main magnetic pole; and

a high frequency oscillator formed between the main magnetic pole and the recording magnetic pole and comprising

a first electrode,

a ruthenium underlayer formed on the first electrode,

a first magnetic layer formed in contact with the ruthenium underlayer, having a negative anisotropy of −6×10 6 to −1.2×10 7 erg/cm 3 (−6×10 8 to −1.2×10 9 nJ/cm 3 ) in a normal line direction perpendicular to a surface of the first magnetic layer, and mainly containing Co 1-x Ir x (x=10 to 45 at %),

a nonmagnetic interlayer formed on the first magnetic layer,

a second magnetic layer formed on the nonmagnetic interlayer, having perpendicular magnetic anisotropy, and containing at least one magnetic material selected from the group consisting of iron, cobalt, and nickel, and

a second electrode formed on the second magnetic layer.

10. A magnetic recording/reproducing apparatus including a magnetic head comprising:

a main magnetic pole;

a recording magnetic pole forming a magnetic circuit together with the main magnetic pole; and

a high frequency oscillator formed between the main magnetic pole and the recording magnetic pole and comprising

a first electrode,

a ruthenium underlayer formed on the first electrode,

a first magnetic layer formed in contact with the ruthenium underlayer, having a negative anisotropy of −6×10 6 to −1.2×10 7 erg/cm 3 (−6×10 8 to −1.2×10 9 nJ/cm 3 ) in a normal line direction perpendicular to a surface of the first magnetic layer, and mainly containing Co 1-x Ir x (x=10 to 45 at %),

a nonmagnetic interlayer formed on the first magnetic layer,

a second magnetic layer formed on the nonmagnetic interlayer, having perpendicular magnetic anisotropy, and containing at least one type of a magnetic material selected from the group consisting of iron, cobalt, and nickel, and

a second electrode formed on the second magnetic layer.

11. A perpendicular magnetic recording medium comprising:

a nonmagnetic substrate;

a ruthenium underlayer formed on the nonmagnetic substrate;

a soft magnetic backing layer formed in contact with the ruthenium underlayer, having a negative anisotropy of −6×10 6 to −1.2×10 7 erg/cm 3 (−6×10 8 to −1.2×10 9 nJ/cm 3 ) in a normal line direction perpendicular to a surface of the soft magnetic backing layer and mainly containing Co 1-x Ir x (x=10 to 45 at %); and

a perpendicular magnetic recording layer formed on the soft magnetic backing layer and containing cobalt, chromium, and platinum.

12. The medium according to claim 11 , wherein the ruthenium underlayer is annealed at a temperature of 400° C. (inclusive) to 650° C. (exclusive).

13. The medium according to claim 11 , further comprising, between the nonmagnetic substrate and the ruthenium underlayer, a seed layer made of at least one type of a material selected from the group consisting of tantalum, platinum, titanium, and nickel.

14. A magnetic recording/reproducing apparatus comprising:

a perpendicular magnetic recording medium comprising

a nonmagnetic substrate,

a ruthenium underlayer formed on the nonmagnetic substrate,

a soft magnetic backing layer formed in contact with the ruthenium underlayer, having a negative anisotropy of −6×10 6 to −1.2×10 7 erg/cm 3 (−6×10 8 to −1.2×10 9 nJ/cm 3 ) in a normal line direction perpendicular to a surface of the soft magnetic backing layer, and mainly containing Co 1-x Ir x (x=10 to 45 at %), and

a perpendicular magnetic recording layer formed on the soft magnetic backing layer and containing cobalt, chromium, and platinum; and

a magnetic head.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 15, 2024
From: RESONAC CORPORATION
To: RESONAC HARD DISK CORPORATION
Reel/Frame 069167/0673 →
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 9, 2018
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Reel/Frame 045158/0466 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE PREVIOUSLY RECORDED AT REEL: 031054 FRAME: 0768. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Aug 20, 2014
From: TAKEO, AKIHIKO; KIKITSU, AKIRA; MAEDA, TOMOYUKI; TAKAHASHI, MIGAKU; SAITO, SHIN; INOUE, KEN; KUROKAWA, GOHEI
To: KABUSHIKI KAISHA TOSHIBA; TOHOKU UNIVERSITY; SHOWA DENKO K.K.
Reel/Frame 033705/0855 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2013
From: TAKEO, AKIHIKO; KIKITSU, AKIRA; MAEDA, TOMOYUKI; TAKAHASHI, MIGAKU; SAITO, SHIN; INOUE, KEN; KUROKAWA, GOHEI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 031054/0768 →