Interface adhesion improvement method

1. A method of forming a buffer layer on a surface of a substrate, comprising:

providing a substrate having a planarization material disposed on an OLED device formed on the substrate in a processing chamber, wherein the planarization material is a polymer material substantially encapsulating entire structures of the OLED device;

supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber;

controlling a substrate temperature less than about 100 degrees Celsius;

forming a buffer layer on the planarization material to encapsulate the OLED device, wherein the buffer layer is an inorganic material;

supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber; and

forming an encapsulating barrier layer on the buffer layer encapsulating the OLED device.

2. The method of claim 1 , wherein the planarization material is selected from a group consisting of polyacrylate, parylene, polyacrylate, parylene, polyimides, polytetrafluoroethylene, copolymer of fluorinated ethylene propylene, perfluoroalkoxy copolymer resin, copolymer of ethylene and tetrafluoroethylene, parylene, plasma-polymerized hexamethyldisiloxane (pp-HMDSO), hexamethyldisiloxane (HMDSO), fluorine doped hexamethyldisiloxane (HMDSO:F), or silicon/carbon containing SiO composite.

3. The method of claim 1 , wherein the buffer layer gas mixture further includes a nitrogen containing gas.

4. The method of claim 3 , wherein the nitrogen containing gas is selected from a group consisting of NH 3 , N 2 , N 2 O, NO 2 and combinations thereof.

5. The method of claim 1 , wherein the silicon containing gas in the buffer layer gas mixture is SiH 4 and the buffer gas mixture further includes NH 3 , N 2 , and N 2 O.

6. The method of claim 1 , wherein the buffer layer is a SiON layer.

7. The method of claim 1 , wherein the buffer layer has a refractive index between about 1.45 and about 1.75.

8. The method of claim 1 , wherein the encapsulating barrier layer is a SiN layer.

9. The method of claim 1 , wherein the buffer layer gas mixture further comprise:

(a) supplying a first gas mixture to form a silicon oxynitride layer; and

(b) supplying a second gas mixture to form a silicon nitride layer on the silicon oxynitride layer.

10. The method of claim 9 , further comprising:

repeatedly performing step (a)-(b) until a desired thickness of the buffer layer is reached.

11. The method of claim 9 , wherein the buffer layer includes multiple layers having a silicon nitride layer sandwiched between silicon oxynitride layers.

12. The method of claim 9 , wherein the first gas mixture includes SiH 4 , H 2 , and N 2 O.

13. A method of performing a surface treatment process, comprising:

providing a substrate having a planarization material formed on and encapsulating substantially entire structures of an OLED device disposed on the substrate in a processing chamber, wherein the planarization material is a polymer material;

supplying a gas mixture including a nitrogen containing gas into the processing chamber; and

performing a surface treatment process using the gas mixture on the surface of the planarization material to encapsulate the OLED device.

14. The method of claim 13 , wherein performing the surface treatment process further includes:

forming a plasma from the gas mixture to treat the surface of the planarization material.

15. The method of claim 13 , wherein performing the surface treatment process further includes:

incorporating nitrogen elements from the gas mixture into the surface of the planarization material.

16. The method of claim 15 , wherein the nitrogen elements is incorporated into a depth over 500 Å the surface of the planarization material.

17. The method of claim 13 , wherein the nitrogen containing gas is selected from a group consisting of N 2 O, NO 2 , NH 3 , N 2 , and combinations thereof.

18. The method of claim 13 , wherein performing the surface treatment process further comprising:

controlling the substrate at a temperature less than about 100 degrees Celsius.

19. The method of claim 13 , wherein the planarization material layer is selected from a group consisting of polyacrylate, parylene, plasma-polymerized hexamethyldisiloxane (pp-HMDSO), hexamethyldisiloxane (HMDSO), fluorine doped hexamethyldisiloxane (HMDSO:F), or silicon/carbon containing SiO composite.

20. The method of claim 13 , further comprising:

forming an encapsulating barrier layer on the treated planarization material to encapsulate the OLED device, wherein the encapsulating barrier layer is a silicon nitride layer.

21. The method of claim 13 , wherein the gas mixture includes NH 3 and N 2 .

22. A method of performing a surface treatment process, comprising:

providing a substrate having an encapsulating barrier layer disposed on an OLED device disposed on the substrate to encapsulate substantially entire structures of the OLED device in a processing chamber;

supplying a gas mixture including NH 3 gas and N 2 gas into the processing chamber;

performing a surface treatment process using the gas mixture on the surface of the encapsulating barrier layer; and

forming a planarization material on the treated encapsulating barrier layer, wherein the planarization material is a polymer material.