Semiconductor reaction chamber with plasma capabilities
A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.
1. A processing chamber comprising:
a reaction chamber having a processing area;
a processing gas inlet in communication with the processing area;
a first excited species generation zone in communication with the processing gas inlet; and,
a second excited species generation zone in communication with the processing gas inlet,
wherein the first and second excited species generation zones are selectively in communication with each other.
2. The processing chamber of claim 1 wherein the first and second excited species generation zones are in communication with each other.
3. The processing chamber of claim 1 wherein a valve is positioned between the first excited species generation zone and the processing gas inlet.
4. The processing chamber of claim 1 wherein a valve is positioned between the second excited species generation zone and the processing gas inlet.
5. The processing chamber of claim 1 wherein the first and second excited species generation zones are non-co-axial.
6. The processing chamber of claim 1 wherein the first and second excited species generation zones are co-axially aligned.
7. The processing chamber of claim 1 wherein the first and second excited species generation zones generate combustibly incompatible precursors.
8. The processing chamber of claim 1 wherein the first excited species generation zone excites a fluorine-based chemistry and the second excited species generation zone excites a chlorine-based chemistry.
9. The processing chamber of claim 1 wherein the first and second excited species generation zones each further comprise an inductively coupled plasma generator.
10. The processing chamber of claim 9 wherein the first and second excited species generation zones inductively coupled plasma generators are each separately controlled.
11. The processing chamber of claim 1 wherein the first and second excited species generation zones each further comprise a capacitively coupled plasma generator.
12. The processing chamber of claim 11 wherein the first and second excited species generation zones capacitively coupled plasma generators are each separately controlled.
13. The processing chamber of claim 1 further comprising an inert gas flow positioned between the first and second excited species generation zones.
14. The processing chamber of claim 1 wherein the first and second excited species generation zones are separated by inert gas valves.
15. The processing chamber of claim 1 wherein the first and second excited species generation zones are at least partially composed of alumina or quartz.
16. The processing chamber of claim 1 wherein the first and second excited species generation zones are energized with a single coil.
17. A processing chamber comprising:
a reaction chamber having a processing area;
a processing gas inlet in communication with the processing area;
a first excited species generation zone in communication with the processing gas inlet; and,
a second excited species generation zone in communication with the processing gas inlet,
wherein the first and second excited species generation zones each further comprise an inductively coupled plasma generator or a capactively coupled plasma generator,
wherein the first and second excited species generation zones inductively coupled plasma generators are each separately controlled, or
wherein the first and second excited species generation zones capacitively coupled plasma generators are each separately controlled.
18. The processing chamber of claim 17 wherein the first and second excited species generation zones are co-axially aligned.
19. The processing chamber of claim 17 wherein the first and second excited species generation zones are non-co-axial.
20. A processing chamber comprising:
a reaction chamber having a processing area;
a processing gas inlet in communication with the processing area;
a first excited species generation zone in communication with the processing gas inlet; and,
a second excited species generation zone in communication with the processing gas inlet,
wherein the first and second excited species generation zones are co-axially aligned.
21. The processing chamber of claim 20 , wherein the first excited species zone and the second excited species zone share an excited species generation source.
22. The processing chamber of claim 20 , further comprising an inlet gas flow through the first excited species generation zone and the second excited species generation zone.