Terahertz quantum cascade laser implementing a {hacek over (C)}erenkov difference-frequency generation scheme
A terahertz source implementing a {hacek over (C)}erenkov difference-frequency generation scheme in a quantum cascade laser. The laser includes an undoped or semi-insulating InP substrate with an exit facet that is polished at an angle between 10° to 40°. The laser further includes a first waveguide cladding layer(s) in contact with an active layer (arranged as a multiple quantum well structure) and a current extraction layer on top of the substrate. Furthermore, the laser includes a second waveguide cladding layer(s) on top of the active layer, where the first and second waveguide cladding layers are disposed to form a waveguide structure by which terahertz radiation generated in the active layer is guided inside the laser. The terahertz radiation is emitted into the substrate at a {hacek over (C)}erenkov angle relative to a direction of the nonlinear polarization wave in the active layer, and once in the substrate, propagates towards the exit facet.
1. A terahertz quantum cascade laser comprising:
a substrate, wherein an exit facet of said substrate is polished at an angle between 10° to 40°;
a doped current extraction semiconductor layer positioned on said substrate;
an active region layer positioned above said current extraction semiconductor layer, wherein said active region layer is arranged as a multiple quantum well structure, wherein said current extraction semiconductor layer is used for lateral current extraction from said active region layer;
a metallic contact electrically connected to said current extraction semiconductor layer for current extraction from said active region layer;
a first one or more waveguide cladding layers between said current extraction semiconductor layer and said action region layer;
a second one or more waveguide cladding layer in contact with and above said active region layer, wherein said first and second one or more waveguide cladding layers are disposed to form a waveguide structure to guide mid-infrared light; and
metal contact layers in contact with said second one or more waveguide cladding layers;
wherein a propagation constant of a nonlinear polarization wave (k nl ), given by a difference between propagation constants of mid-infrared pumps in said waveguide structure, in said active region layer is smaller compared to a propagation constant of a terahertz radiation (k THz ) propagating in said substrate, wherein said terahertz radiation is emitted into said substrate at a {hacek over (C)}erenkov angle relative to a direction of said nonlinear polarization wave, wherein said terahertz radiation once in said substrate propagates towards said exit facet.
2. The terahertz quantum cascade laser as recited in claim 1 , wherein said {hacek over (C)}erenkov angle is equal to: cos −1 (k nl /k THz ).
3. The terahertz quantum cascade laser as recited in claim 1 , wherein said active region layer comprises two sections designed to emit mid-IR pumps at ω 1 and ω 2 , wherein said ω 1 and ω 2 are two different mid-IR pump frequencies.
4. The terahertz quantum cascade laser as recited in claim 3 , wherein a refractive index of said substrate at a terahertz difference-frequency (ω THz ) is larger than a group refractive index (n g ) at a mid-infrared frequency ω, wherein said
n
g
(
ω
)
=
n
eff
(
ω
)
+
ω
ⅆ
n
eff
ⅆ
ω
n
g
,
wherein said n eff (ω) is an effective refractive index of a mid-infrared pump mode at said frequency ω and is approximately the same for two mid-infrared pumps at said frequencies ω 1 and ω 2 , wherein said ω THz =ω 1 -ω 2 .
5. The terahertz quantum cascade laser as recited in claim 1 , wherein said nonlinear polarization wave propagates at a higher phase velocity compared to said terahertz radiation in said substrate.
6. The terahertz quantum cascade laser as recited in claim 1 , wherein said active region layer is arranged as a InGaAs/AlInAs multiple quantum well structure, wherein said active region layer uses said InGaAs in quantum well layers and uses said AlInAs in quantum barrier layers.
7. The terahertz quantum cascade laser as recited in claim 1 , wherein said substrate is formed of semi-insulating or undoped indium phosphide.
8. The terahertz quantum cascade laser as recited in claim 1 , wherein said metal contact layers are formed of gold.
9. The terahertz quantum cascade laser as recited in claim 1 , wherein one of said second one or more waveguide cladding layers in contact with said active region layer comprises an approximately 3.5 μm thick indium phosphide n-doped to 1×10 16 cm −3 followed by an 34 approximately 200 nm thick indium phosphide n-doped to 2×10 18 cm −3 .
10. The terahertz quantum cascade laser as recited in claim 1 , wherein one of said first one or more waveguide cladding layers below said active region layer comprises an approximately 3.5 μm thick indium phosphide n-doped to 1×10 16 cm −3 and said current extraction semiconductor layer comprises an approximately 200 nm thick InGaAs layer n-doped to 1×10 18 cm −3 .
11. The terahertz quantum cascade laser as recited in claim 1 , wherein said substrate is between 100 μm and 3,000 μm thick.
12. The terahertz quantum cascade laser as recited in claim 1 , wherein said substrate is less than 100 μm and more than 3,000 μm thick.