Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device includes a first semiconductor chip including a first surface and a plurality of first electrodes disposed on the first surface; a second semiconductor chip including a second surface which faces the first surface, a plurality of second electrodes each of which includes at least one end disposed on the second surface, and a plurality of first protrusions each of which surrounds the one end of each of the second electrodes on an electrode by electrode basis; a plurality of conductive joint materials each of which joins a third electrode included in the first electrodes to the one end of an electrode which faces the third electrode among the second electrodes; and a plurality of first underfill resins each of which is disposed inside one of the first protrusions and covers one of the conductive joint materials on a material by material basis.
1. A semiconductor device comprising:
a first semiconductor chip which includes a first surface and a first electrode disposed on the first surface;
a second semiconductor chip which includes a semiconductor substrate, a second surface which faces the first surface, a second electrode which includes at least one end disposed on the second surface and which faces the first electrode, and a first protrusion which surrounds the one end of the second electrode;
a conductive joint material which joins the first electrode to the one end of the second electrode; and
a first underfill resin which is disposed inside the first protrusion and covers the conductive joint material,
wherein the first protrusion is included in the semiconductor substrate, and
the first protrusion includes a material that is same material of the semiconductor substrate, and
a heat spreader disposed on an area of the second surface which is outside the first semiconductor chip in a plan view.
2. The semiconductor device according to claim 1 ,
wherein the second semiconductor chip further includes a second protrusion which surrounds the first semiconductor chip in a plan view.
3. The semiconductor device according to claim 2 , further comprising:
a second underfill resin, which has thermal conductivity greater than thermal conductivity of the first underfill resin, disposed between the first semiconductor chip and the second semiconductor chip; and
a heat spreader disposed on an opposite side of the first semiconductor chip from the second semiconductor chip.
4. The semiconductor device according to claim 3 ,
wherein the second underfill resin includes either one or both of a carbon nanotube and a conductive particle.
5. The semiconductor device according to claim 1 , further comprising:
a substrate disposed on an opposite side of the second semiconductor chip from the first semiconductor chip.
6. The semiconductor device according to claim 1 ,
wherein the first electrode is connected to an integrated circuit included in the first semiconductor chip, and
the second electrode is configured to pass through a semiconductor substrate included in the second semiconductor chip.
7. A semiconductor device comprising:
a first semiconductor chip which includes a first surface and a first electrode disposed on the first surface;
a second semiconductor chip which includes a semiconductor substrate, a second surface which faces the first surface, a second electrode which includes at least one end disposed on the second surface and which faces the first electrode, a first protrusion which surrounds the one end of the second electrode, and a second protrusion which surrounds the first semiconductor chip in a plan view, the first protrusion being included in the semiconductor substrate;
a conductive joint material which joins the first electrode to the one end of the second electrode; and
a first underfill resin which is disposed inside the first protrusion and covers the conductive joint material.
8. The semiconductor device according to claim 7 , further comprising:
a heat spreader disposed on an area of the second surface which is outside the first semiconductor chip in a plan view.
9. The semiconductor device according to claim 7 , further comprising:
a second underfill resin, which has thermal conductivity greater than thermal conductivity of the first underfill resin, disposed between the first semiconductor chip and the second semiconductor chip; and
a heat spreader disposed on an opposite side of the first semiconductor chip from the second semiconductor chip.
10. The semiconductor device according to claim 9 ,
wherein the second underfill resin includes either one or both of a carbon nanotube and a conductive particle.
11. The semiconductor device according to claim 7 , further comprising:
a substrate disposed on an opposite side of the second semiconductor chip from the first semiconductor chip.
12. The semiconductor device according to claim 7 ,
wherein the first electrode is connected to an integrated circuit included in the first semiconductor chip, and
the second electrode is configured to pass through a semiconductor substrate included in the second semiconductor chip.
13. A semiconductor device comprising:
a first semiconductor chip which includes a first surface and a first electrode disposed on the first surface;
a second semiconductor chip which includes a semiconductor substrate, a second surface which faces the first surface, a second electrode which includes at least one end disposed on the second surface and which faces the first electrode, and a first protrusion which surrounds the one end of the second electrode;
a conductive joint material which joins the first electrode to the one end of the second electrode;
a first underfill resin which is disposed inside the first protrusion and covers the conductive joint material;
a substrate disposed on an opposite side of the second semiconductor chip from the first semiconductor chip,
wherein the first protrusion is included in the semiconductor substrate.
14. The semiconductor device according to claim 13 , further comprising:
a heat spreader disposed on an area of the second surface which is outside the first semiconductor chip in a plan view.
15. The semiconductor device according to claim 13 ,
wherein the first electrode is connected to an integrated circuit included in the first semiconductor chip, and
the second electrode is configured to pass through a semiconductor substrate included in the second semiconductor chip.