Light-emitting device and method for manufacturing the same
An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
1. A light emitting device comprising:
a transistor comprising:
a first gate electrode layer;
a first insulating layer over the first gate electrode layer;
an oxide semiconductor layer including a channel formation region over the first insulating layer;
a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
a second insulating layer over the oxide semiconductor layer, the source electrode layer and the drain electrode layer; and
a second gate electrode layer over the second insulating layer, wherein the second gate electrode layer overlaps with the channel formation region;
a connection terminal comprising:
a first conductive layer;
the first insulating layer including a first contact hole over the first conductive layer;
a second conductive layer over and in contact with the first conductive layer through the first contact hole;
the second insulating layer including a second contact hole over the second conductive layer; and
a third conductive layer over and in contact with the second conductive layer through the second contact hole; and
a light emitting portion comprising:
a color filter layer; and
a light emitting element over the color filter layer,
wherein the first conductive layer is formed from a same layer as the first gate electrode layer,
wherein the second conductive layer is formed from a same layer as the source electrode layer and the drain electrode layer, and
wherein the third conductive layer is formed from a same layer as the second gate electrode layer.
2. The light emitting device according to claim 1 , wherein the first gate electrode layer is electrically connected to the second gate electrode layer.
3. The light emitting device according to claim 1 , wherein the transistor is included in a driver circuit portion.
4. The light emitting device according to claim 1 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
5. The light emitting device according to claim 1 , wherein the second insulating layer comprises stacked layers selected from a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum oxynitride film.
6. The light emitting device according to claim 1 , wherein emission color of the light emitting element is white.
7. The light emitting device according to claim 1 ,
wherein the light emitting element comprises a first light emitting unit and a second light emitting unit, and
wherein a charge generation layer is formed between the first light emitting unit and the second light emitting unit.
8. The light emitting device according to claim 1 , wherein the oxide semiconductor layer comprises indium, tin, and zinc.
9. The light emitting device according to claim 1 , wherein the oxide semiconductor layer comprises a region being in an oxygen-excess state.
10. The light emitting device according to claim 1 ,
wherein the light emitting element comprises a first light emitting unit and a second light emitting unit,
wherein emission color of the first light emitting unit is blue, and
wherein emission color of the second light emitting unit is yellow.