Resistive memory structure
A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.
1. A resistive memory structure comprising:
at least one reactive layer extending along a first direction and a second direction;
at least one electrode extending at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other; and
at least one resistance-changing material, at least part of the resistance-changing material being disposed between the reactive layer and the electrode, wherein when ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.
2. The resistive memory structure according to claim 1 , wherein the reactive layer is a reactive metal layer.
3. The resistive memory structure according to claim 2 , wherein a material of the reactive metal layer comprises Ti, Ta, or a combination thereof.
4. The resistive memory structure according to claim 1 wherein the at least one reactive layer is included among a plurality of metal layers.
5. The resistive memory structure according to claim 4 , wherein sidewalls of the metal layers are oxidized.
6. The resistive memory structure according to claim 4 , wherein a material of the metal layers comprises TiN, TaN, Ti, W, Al, Ta or a combination thereof.
7. The resistive memory structure according to claim 1 , wherein the resistance-changing material is an oxide.
8. The resistive memory structure according to claim 7 , wherein the resistance-changing material comprises HfO 2 , SiO 2 , TiO 2 , TaO, or Al 2 O 3 .
9. The resistive memory structure according to claim 7 , wherein the reactive layer is an oxygen ion getter.
10. The resistive memory structure according to claim 1 , wherein the electrode is encapsulated in the resistance-changing material.
11. The resistive memory structure according to claim 1 , wherein a material of the electrode comprises TiN, W, Ti, or a combination thereof.
12. The resistive memory structure according to claim 1 , wherein the at least one reactive layer is a plurality of reactive layers, the at least one electrode is a plurality of electrodes, the at least one resistance-changing material is a plurality of resistance-changing materials, each of the reactive layers is disposed between and connects two adjacent resistance-changing materials.
13. The resistive memory structure according to claim 12 , wherein each of the electrodes is encapsulated in one of the resistance-changing materials.
14. The resistive memory structure according to claim 1 , wherein the at least one of the reactive layers is a plurality of pairs of reactive layers, the at least one electrode is a plurality of electrodes, the at least one resistance-changing material is a plurality of resistance-changing materials, and each of the resistance-changing materials is disposed between and contacts a pair of reactive layers.
15. The resistive memory structure according to claim 14 , wherein each of the electrodes is encapsulated in one of the resistance-changing materials.
16. The resistive memory structure according to claim 14 further comprising:
a middle electrode disposed between each of the reactive layers and the electrode; and
a switch layer disposed between the middle electrode and the electrode.
17. The resistive memory structure according to claim 1 , wherein the first direction, the second direction, and the third direction are substantially perpendicular to each other.
18. The resistive memory structure according to claim 1 , wherein the electrode is a conductive line extending along the third direction.
19. The resistive memory structure according to claim 18 , wherein a width of the conductive line is less than each of a width of the reactive layer and a width of the resistance-changing material.
20. The resistive memory structure according to claim 1 , wherein the resistance-changing material surrounds a side wall of the reactive layer, and the electrode covers the resistance-changing material.