Semiconductor device

1. A semiconductor device, comprising:

an AC coupling element that is formed on a semiconductor substrate;

a temperature monitoring unit that outputs a temperature monitor signal in response to a change in a temperature of the semiconductor substrate;

a heat generation determination unit that outputs a heat generation detection signal on the basis of the temperature monitor signal;

a power supply pad that applies a supply voltage; and

a transmitter circuit that is connected to the AC coupling element,

wherein the temperature monitoring unit includes a first temperature monitoring element that outputs the temperature monitor signal,

wherein the first temperature monitoring element is arranged in a region immediately below or a region adjacent to the AC coupling element,

wherein the heat generation determination unit includes a comparator,

wherein the comparator outputs the heat generation detection signal on the basis of a comparison result between a reference voltage and the temperature monitor signal, and

wherein a resistance value of a power supply line between the power supply pad and the comparator is smaller than a resistance value between the power supply pad and the transmitter circuit.

2. The semiconductor device according to claim 1 ,

wherein the temperature monitoring unit further includes a second temperature monitoring element,

wherein the second temperature monitoring element is arranged in a region immediately below or in a region adjacent to the AC coupling element, and connected in parallel to the first temperature monitoring element.

3. The semiconductor device according to claim 1 , further comprising:

a temperature detection unit that activates an overheat protection function,

wherein the reference voltage is larger than a reference voltage which is applied to the temperature detection unit.

4. The semiconductor device according to claim 1 , further comprising:

a reference temperature detection element,

wherein a distance between the reference temperature detection element and the AC coupling element is larger than a distance between the temperature monitoring unit and the AC coupling element, and

wherein the reference temperature detection element generates the reference voltage.

5. The semiconductor device according to claim 1 ,

wherein the temperature monitoring unit is arranged adjacent to a transmission driver circuit of the transmitter circuit.

6. The semiconductor device according to claim 1 ,

wherein a distance between the AC coupling element and the heat generation determination unit is larger than a distance between the AC coupling element and the temperature monitoring unit.

7. The semiconductor device according to claim 6 ,

wherein the AC coupling element is an on-chip transformer or a coupling capacitor.

8. A semiconductor device, comprising:

an AC coupling element that is formed on a semiconductor substrate;

a temperature monitoring unit that outputs a temperature monitor signal in response to a change in a temperature of the semiconductor substrate;

a heat generation determination unit that outputs a heat generation detection signal on the basis of the temperature monitor signal;

a power supply pad that applies a supply voltage; and

a receiver circuit that is connected to the AC coupling element,

wherein the temperature monitoring unit includes a first temperature monitoring element that outputs the temperature monitor signal,

wherein the first temperature monitoring element is arranged in a region immediately below or a region adjacent to the AC coupling element,

wherein the heat generation determination unit includes a comparator,

wherein the comparator outputs the heat generation detection signal on the basis of a comparison result between a reference voltage and the temperature monitor signal, and

wherein a resistance value of a power supply line between the power supply pad and the comparator is smaller than a resistance value between the power supply pad and the receiver circuit.

9. The semiconductor device according to claim 8 ,

wherein the temperature monitoring unit is arranged adjacent to the receiver circuit.

10. A semiconductor device, comprising:

a temperature monitoring unit that includes a first temperature monitoring element formed on a semiconductor substrate, the temperature monitoring unit outputting a temperature monitor signal in response to a change in a temperature of the semiconductor substrate; and

an AC coupling element that includes a first element and a second element formed on the semiconductor substrate,

wherein the first element and the second element are arranged to perform AC coupling, and

wherein the first temperature monitoring element is arranged in a region immediately below or in a region adjacent to a formation region of the AC coupling element,

wherein the first element includes a first coil which is formed of a first wiring layer,

wherein the second element includes a second coil which is formed of a second wiring layer different from the first wiring layer, and

wherein the first temperature monitoring element formed in the region adjacent to the AC coupling element is covered with a shield layer formed of the lower wiring layer of the first wiring layer and the second wiring layer.

11. The semiconductor device according to claim 10 ,

wherein the first element includes a third coil which is formed of a third wiring layer, and

wherein the second element includes a fourth coil which is formed of the third wiring layer.

12. The semiconductor device according to claim 10 ,

wherein the first element includes a first capacitive electrode, and

wherein the second element includes a second capacitive electrode.

13. The semiconductor device according to claim 10 ,

wherein the temperature monitoring unit further includes a second temperature monitoring element which is formed on the semiconductor substrate, and

wherein the second temperature monitoring element is arranged in a region immediately below or in a region adjacent to the AC coupling element, and connected in parallel to the first temperature monitoring element.

14. A semiconductor device, comprising:

an AC coupling element that is formed on a semiconductor substrate;

a transmitter circuit that drives the AC coupling element;

a temperature monitoring unit that outputs a temperature monitor signal in response to a change in the temperature of the semiconductor substrate;

a heat generation determination unit that outputs a heat generation detection signal on the basis of the temperature monitor signal;

a control circuit that controls the transmitter circuit in response to the heat generation detection signal; and

a power supply pad that applies a supply voltage,

wherein the heat generation determination unit includes a comparator, and

wherein a resistance value of a power supply line between the power supply pad and the comparator is smaller than a resistance value between the power supply pad and the transmitter circuit.

15. The semiconductor device according to claim 14 ,

wherein when the heat generation determination unit determines that a temperature of the semiconductor substrate exceeds a given value, the control circuit outputs a given signal to the transmitter circuit in response to the heat generation detection signal, without depending on an input signal to the control circuit.