Semiconductor device having buried channel array
A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.
1. A semiconductor device comprising:
a substrate, and a field region disposed in the substrate and defining active regions of the substrate, and
wherein the substrate has active trenches therein extending in and across the active regions, and the field region has field trenches therein, and gate trenches each are constituted by respective ones of the active and field trenches together; and
word lines each occupying the gate trenches, respectively, and each extending longitudinally in a first direction across a plurality of the active regions, and
wherein the word lines include active gate electrodes disposed within the active trenches, field gate electrodes disposed within the field trenches, and fin gate electrodes,
each of the fin gate electrodes having front and back surfaces spaced from each other in the first direction and a bottommost surface extending between the front and back surfaces in the first direction,
each of the fin gate electrodes having a center midway between the front and back surfaces thereof in the first direction, each of the active and field gate electrodes having a center in the first direction, and the centers of the fin gate electrodes being spaced in the first direction with respect to the centers of respective ones of the active and field gate electrodes, and
each of the field gate electrodes has a bottommost surface disposed at a level higher than that of the bottommost surfaces of the fin gate electrodes.
2. A semiconductor device comprising:
a substrate, and a field region disposed in the substrate and defining active regions of the substrate, and
wherein the field region has first sections each of which spaces respective ones of the active regions apart from one another by a first distance in the first direction, and second sections each of which spaces respective ones of the active regions apart from one another by a second distance greater than the first distance in the first direction,
wherein the substrate has active trenches therein extending in and across the active regions, the field region has field trenches extending in the first and second sections of the field region, and gate trenches each are constituted by respective ones of the active and field trenches together; and
word lines each occupying the gate trenches, respectively, and each extending longitudinally in a first direction across a plurality of the active regions, and
wherein the word lines include active gate electrodes disposed within the active trenches, field gate electrodes disposed within the field trenches extending in the second sections of the field region such that the field gate electrodes are disposed on said second sections of the field region, and fin gate electrodes at least some of which are disposed in the field trenches extending in the first sections of the field regions such that said at least some of the fin gate electrodes are disposed on the first sections of the field region, and
wherein each of the field gate electrodes has a bottommost surface disposed at a level higher than that of the bottommost surfaces of the fin gate electrodes.
3. The device of claim 2 , wherein the field gate electrodes of the word lines have bottommost surfaces disposed at a level higher than that of the bottommost surfaces of the active gate electrodes.
4. The device of claim 1 , wherein the fin gate electrodes are disposed on both sides of each of the active regions in the first direction.
5. The device of claim 1 , wherein the bottommost surface of each of the fin gate electrodes is disposed at a level lower than the bottommost surface of each of the active gate electrodes.
6. The device of claim 1 , wherein the field trenches have the same depth as the active trenches.
7. The device of claim 1 , wherein the field trenches are deeper than the active trenches.