Terminal structure and semiconductor device
The present invention relates to a terminal structure comprising: a base material 10 ; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, a height H bm at which the bump has a maximum diameter (L bm ) is lower than a maximum height H u of the under-bump metal layer.
1. A terminal structure comprising:
a base material;
an electrode formed on the base material;
an insulating coating layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode;
an under-bump metal layer filling the opening and covering part of the insulating coating layer; and
a dome-shaped bump covering the under-bump metal layer, wherein
in a cross section along a lamination direction, a height at which the bump has a maximum diameter is lower than a maximum height of the under-bump metal layer.
2. The terminal structure according to claim 1 , wherein the bump has a maximum diameter of 5 to 40 μm.
3. The terminal structure according to claim 1 wherein the bump contains tin as a main component.
4. The terminal structure according to claim 1 , wherein the under-bump metal layer contains nickel as a main component.
5. The terminal structure according to claim 1 , wherein the bump contains titanium.
6. A semiconductor device comprising the terminal structure according to claim 1 .