Semiconductor device
View Patent ↗A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a silicon cap. The fin-shaped structures are disposed on a substrate and are covered by the gate structure. The epitaxial structures are disposed at one side of the gate structure and respectively directly contact each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other. The silicon cap simultaneously surrounds the epitaxial structures.
1. A semiconductor device, comprising:
at least two fin-shaped structures, disposed on a substrate;
a gate structure, covering the fin-shaped structures;
at least two epitaxial structures, disposed at one side of the gate structure and respectively directly contacting each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other; and
a silicon cap, simultaneously surrounding the epitaxial structures.
2. The structure according to claim 1 , further comprising at least two recesses, respectively disposed at an end of each of the fin-shaped structures, wherein each of the epitaxial structures respectively fills up each of the recesses.
3. The structure according to claim 1 , wherein the epitaxial structures respectively cover an end of each of the fin-shaped structures.
4. The structure according to claim 1 , further comprising at least an insulating layer, disposed between the epitaxial structures.
5. The structure according to claim 4 , wherein the silicon cap directly covers the insulating layer between the epitaxial structures.
6. The structure according to claim 1 , wherein each of the epitaxial structures comprises a low doped epitaxial layer, a high doped epitaxial layer and a liner.
7. The structure according to claim 1 , wherein a composition of each of the epitaxial structures comprises silicon germanium, silicon phosphide or silicon carbide.
8. The structure according to claim 1 , wherein each of the epitaxial structures comprises a top portion and the top portions are substantially in a same plane.
9. The structure according to claim 1 , wherein the silicon cap has a concavo-convex profile.
10. The structure according to claim 1 , wherein a material of the silicon cap is monocrystalline silicon.
11. The structure according to claim 1 , further comprising:
a dielectric layer, covering the gate structure and the silicon cap; and
at least a contact structure, disposed in the dielectric layer and in direct contact with the silicon cap.
12. A semiconductor device, comprising:
at least two fin-shaped structures, disposed on a substrate;
a gate structure, covering the fin-shaped structures;
at least two epitaxial structures, disposed at one side of the gate structure and respectively directly contacting each fin-shaped structure, wherein there is an overlapped portion between the two adjacent epitaxial structures and each of the epitaxial structures has a width, wherein a ratio of the overlapped portion to the width of each of the epitaxial structures substantially ranges from 0.001 to 0.25;
a silicon cap, simultaneously surrounding the epitaxial structures; and
a space, located between the substrate and the epitaxial structures, wherein the space is filled with the silicon cap.
13. The structure according to claim 12 , further comprising at least two recesses, respectively disposed at an end of each of the fin-shaped structures, wherein each of the epitaxial structures respectively fills up each of the recesses.
14. The structure according to claim 12 , wherein the epitaxial structures respectively cover an end of each of the fin-shaped structures.
15. The structure according to claim 12 , wherein each of the epitaxial structures comprises a low doped epitaxial layer, a high doped epitaxial layer and a liner.
16. The structure according to claim 12 , wherein a composition of each of the epitaxial structures comprises silicon germanium, silicon phosphide or silicon carbide.
17. The structure according to claim 12 , wherein the silicon cap has a concavo-convex profile.
18. The structure according to claim 12 , wherein a material of the silicon cap is monocrystalline silicon.
19. The structure according to claim 12 , further comprising:
a dielectric layer, covering the gate structure and the silicon cap; and
at least a contact structure, disposed in the dielectric layer and in direct contact with the silicon cap.