Resist pattern-forming method
A resist pattern-forming method includes applying a radiation-sensitive resin composition on a substrate to form a resist film. The radiation-sensitive resin composition includes an acid-labile group-containing polymer and a photoacid generator. The resist film is exposed. The resist film is developed using a developer including an organic solvent in an amount of no less than 80% by mass to a total amount of the developer. The radiation-sensitive resin composition has a contrast value γ of from 5.0 to 30.0. The contrast value γ is calculated from a resist dissolution contrast curve obtained by changing only a dose of a light used for exposing the resist film.
1. A resist pattern-forming method comprising:
applying a radiation-sensitive resin composition on a substrate to form a resist film, the radiation-sensitive resin composition comprising an acid-labile group-containing polymer and a photoacid generator;
exposing the resist film; and
developing the resist film using a developer comprising an organic solvent in an amount of no less than 80% by mass to a total amount of the developer,
the radiation-sensitive resin composition having a contrast value γ of from 5.0 to 30.0, the contrast value γ being calculated from a resist dissolution contrast curve obtained by changing only a dose of a light used for exposing the resist film,
the acid-labile group-containing polymer comprising:
a structural unit that includes a polycyclic lactone-containing group or a polycyclic carbonate-containing group; and
at least one structural unit derived from compounds each shown by formulae:
wherein, R 3 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group.
2. The resist pattern-forming method according to claim 1 , wherein the radiation-sensitive resin composition further comprises a tri(cyclo)alkylamine, an amide group-containing compound, a photodegradable base or a combination thereof as an acid diffusion control agent.
3. The resist pattern-forming method according to claim 1 , wherein the organic solvent includes an alkyl carboxylate having 3 to 7 carbon atoms, a dialkyl ketone having 3 to 10 carbon atoms or a combination thereof.
4. The resist pattern-forming method according to claim 1 , wherein the acid-labile group-containing polymer further includes a structural unit shown by a formula (1):
wherein R 1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, R 2 represents a monovalent acid-labile group that is a linear or branched hydrocarbon group having 1 to 9 carbon atoms or an alicyclic group having 4 to 20 carbon atoms, wherein the alicyclic group represented by R 2 is unsubstituted or a part or all of hydrogen atoms of the alicyclic group represented by R 2 are substituted.
5. The resist pattern-forming method according to claim 1 , wherein a content of the at least one structural unit derived from the compounds in the acid-labile group-containing polymer is from 1 to 30 mol % to a total structural units in the acid-labile group-containing polymer.
6. A resist pattern-forming method comprising:
applying a radiation-sensitive resin composition on a substrate to form a resist film, the radiation-sensitive resin composition comprising an acid-labile group-containing polymer, a photoacid generator, and γ-butyrolactone;
exposing the resist film; and
developing the resist film using a developer comprising an organic solvent in an amount of no less than 80% by mass to a total amount of the developer,
the radiation-sensitive resin composition having a contrast value γ of from 5.0 to 30.0, the contrast value γ being calculated from a resist dissolution contrast curve obtained by changing only a dose of a light used for exposing the resist film.
7. The resist pattern-forming method according to claim 6 , wherein the radiation-sensitive resin composition further comprises a tri(cyclo)alkylamine, an amide group-containing compound, a photodegradable base or a combination thereof as an acid diffusion control agent.
8. The resist pattern-forming method according to claim 6 , wherein the organic solvent includes an alkyl carboxylate having 3 to 7 carbon atoms, a dialkyl ketone having 3 to 10 carbon atoms or a combination thereof.
9. The resist pattern-forming method according to claim 6 , wherein the acid-labile group-containing polymer includes a structural unit shown by a formula (1) and a structural unit shown by a formula (2):
wherein,
in the formula (1), R 1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, R 2 represents a monovalent acid-labile group that is a linear or branched hydrocarbon group having 1 to 9 carbon atoms or an alicyclic group having 4 to 20 carbon atoms, wherein the alicyclic group represented by R 2 is unsubstituted or a part or all of hydrogen atoms of the alicyclic group represented by R 2 are substituted, and
in the formula (2), R 3 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and R 4 represents a monovalent non-acid-labile group that has an alicyclic structure and includes a polar group, wherein a lactone-containing group and a cyclic carbonate-containing group are excluded from R 4 .
10. The resist pattern-forming method according to claim 9 , wherein R 4 represents a group that has a polyalicyclic structure, and includes a carbonyl group, a hydroxyl group or a cyano group as the polar group.
11. The resist pattern-forming method according to claim 9 , wherein a content of the structural unit shown by a formula (2) in the acid-labile group-containing polymer is from 1 to 30 mol % to a total amount of the acid-labile group-containing polymer.
12. The resist pattern-forming method according to claim 9 , wherein the acid-labile group-containing polymer further includes a structural unit that includes a lactone-containing group or a cyclic carbonate-containing group.