Non-volatile memory system with reliability enhancement mechanism and method of manufacture thereof

1. A method of manufacturing a non-volatile memory system comprising:

forming a dielectric layer having a hole therethrough;

depositing a first electrode in the hole of the dielectric layer;

applying a memory switching layer directly onto the first electrode such that the memory switching layer is in direct physical contact with the first electrode and the dielectric layer;

applying an ion source layer directly onto the memory switching layer such that the ion source layer is in direct physical contact with the memory switching layer and the dielectric layer; and

depositing a second electrode over the ion source layer, wherein depositing the second electrode over the ion source layer includes:

depositing an interface layer on the ion source layer,

applying a cap layer on the interface layer, and

forming a barrier structure by annealing coplanar surfaces of the interface layer and the cap layer.

2. The method as claimed in claim 1 , wherein applying the memory switching layer includes applying gadolinium oxide aluminum oxide, or silicon oxide.

3. The method as claimed in claim 1 , further comprising applying a voltage reference interconnect on the second electrode and coupling a control interconnect to the first electrode for operating a non-volatile memory cell.

4. The method as claimed in claim 1 , further comprising coupling a control field effect transistor to the first electrode including coupling a control interconnect between the control field effect transistor and the first electrode.

5. A non-volatile memory system comprising:

a dielectric layer having a hole;

a first electrode deposited in the hole of the dielectric layer;

a memory switching layer deposited in the hole and in direct physical contact with the first electrode and the dielectric layer;

an ion source layer in direct physical contact with the memory switching layer and the dielectric layer, and on a side of the memory switching layer opposite the first electrode; and

a second electrode including:

an interface layer in direct physical contact with the ion source layer, wherein the interface layer is chemically and mechanically bonded to the ion source layer; and

a cap layer in direct physical contact with the interface layer.

6. The system as claimed in claim 5 , wherein the memory switching layer includes gadolinium oxide, aluminum oxide, or silicon oxide.

7. The system as claimed in claim 5 , further comprising a voltage reference interconnect applied on the second electrode.

8. The system as claimed in claim 5 , further comprising a control field effect transistor coupled to the first electrode.

9. The system as claimed in claim 5 , further comprising a barrier structure formed by annealed coplanar surfaces of the interface layer and the cap layer.

10. The system as claimed in claim 5 , wherein the interface layer has a thickness in a range of between 1 nm and 2 nm.

11. The system as claimed in claim 5 , further comprising a voltage reference interconnect applied on the second electrode and a control interconnect coupled to the first electrode for operating a non-volatile memory cell.

12. The system as claimed in claim 5 , further comprising a control field effect transistor coupled to the first electrode and a control interconnect between the control field effect transistor and the first electrode.

13. The system as claimed in claim 5 , further comprising a barrier structure formed by annealed coplanar surfaces of the interface layer and the cap layer, with the cap layer heated to a range of 200-450 degrees Celsius for preventing a delamination of the second electrode.

14. The system as claimed in claim 5 , wherein the interface layer is one of titanium, silicon, zirconium, or an alloy of titanium, silicon, and zirconium.

15. The system as claimed in claim 5 , wherein the cap layer is one of tungsten, tungsten nitride, titanium, and titanium nitride.

16. The system as claimed in claim 5 , wherein the dielectric layer includes silicon; wherein the first electrode includes a metal or alloy including platinum, titanium nitride, ruthenium, tungsten, or tungsten nitride; wherein the memory switching layer includes an insulating material including gadolinium oxide, aluminum oxide, or silicon oxide; wherein the ion source layer includes an alloy of tellurium; and wherein the interface layer includes titanium, silicon, or zirconium, or an alloy of titanium, silicon, and zirconium.

17. The system as claimed in claim 5 , wherein the second electrode is in direct physical contact with the dielectric layer.

18. The system as claimed in claim 17 , wherein the interface layer is in direct physical contact with the dielectric layer.

19. The system as claimed in claim 18 , wherein the cap layer is in direct physical contact with the dielectric layer.

20. A non-volatile memory system comprising:

a dielectric layer having a hole;

a first electrode deposited in the hole of the dielectric layer;

a memory switching layer deposited in the hole and in direct physical contact with the first electrode and the dielectric layer;

an ion source layer in direct physical contact with the memory switching layer and the dielectric layer, and on a side of the memory switching layer opposite the first electrode; and

a second electrode including:

an interface layer in direct physical contact with the ion source layer, wherein the interface layer is chemically and mechanically bonded to the ion source layer, and

a cap layer in direct physical contact with the interface layer,

wherein,

the first electrode, second electrode, memory switching layer, and ion source layer reside within the hole.