Non-volatile solid state resistive switching devices
View Patent ↗Non-crystalline silicon non-volatile resistive switching devices include a metal electrode, a non-crystalline silicon layer and a planar doped silicon electrode. An electrical signal applied to the metal electrode drives metal ions from the metal electrode into the non-crystalline silicon layer to form a conducting filament from the metal electrode to the planar doped silicon electrode to alter a resistance of the non-crystalline silicon layer. Another electrical signal applied to the metal electrode removes at least some of the metal ions forming the conducting filament from the non-crystalline silicon layer to further alter the resistance of the non-crystalline silicon layer.
1. A resistive switching device comprising:
a substrate comprising a surface region;
a first dielectric material overlying the surface region of the substrate;
a first electrode overlying the first dielectric material, wherein the first electrode comprises a p-doped polysilicon material;
a second electrode comprising at least an aluminum material; and
a switching material disposed between the first electrode and the second electrode, the switching material comprising an undoped amorphous silicon material, wherein the undoped amorphous silicon material is characterized by a controlled defect density that is associated with a desired on-resistance for the resistive switching device; wherein the switching material is disposed adjacent to and in contact with the aluminum material.
2. The device of claim 1 wherein the resistive switching device is configured to have three or more non-volatile resistance states.
3. The device of claim 1 wherein the switching device comprises a non-volatile solid state resistive switch device produced using chemical vapor deposition, and wherein the controlled defect density associated with the undoped amorphous silicon material is a deposition temperature-dependent defect density produced during device fabrication based at least in part on a selected deposition temperature used during deposition of the undoped amorphous silicon material.
4. The device of claim 1 wherein the switching device comprises a non-volatile solid state resistive switch device produced using chemical vapor deposition, and wherein the controlled defect density associated with the undoped amorphous silicon material is a Hydrogen concentration-dependent defect density produced during device fabrication based at least in part on a selected Hydrogen concentration used during deposition of the undoped amorphous silicon material.
5. The device of claim 1 wherein a filament is removably disposed in a portion of the switching material, wherein the filament comprises a plurality of aluminum particles from the aluminum material.
6. The device of claim 5 wherein a voltage causes a resistance of the resistive switching device to change to the desired on-resistance.
7. The device of claim 1 wherein the undoped amorphous silicon material comprises undoped LPCVD amorphous silicon material.
8. The device of claim 1 , wherein the first and second electrodes and the switching material together comprise a non-volatile switching device supported by the substrate.
9. The device of claim 8 , wherein the switching material is configured to have a filament removably disposed therein, wherein the filament comprises a plurality of aluminum particles from the aluminum material.
10. A memory device comprising a plurality of non-volatile switching devices of claim 8 , wherein the plurality of non-volatile switching devices are all carried by the substrate.
11. A memory device comprising:
a substrate comprising a surface region;
a first dielectric material overlying the surface region of the substrate;
a first plurality of electrodes overlying the first dielectric material, wherein the first plurality of electrodes comprise a metal material and a conductive material, wherein the conductive material has a resistance higher than the metal material;
a second plurality of electrodes comprising at least an aluminum material; and
a switching material disposed between intersections of the first plurality of electrodes and the second plurality of electrodes, wherein the switching material comprising a silicon material substantially free of p-type dopants, and further wherein the silicon material is characterized by a controlled defect density that is associated with a desired on-resistance for a resistive switching device;
wherein the switching material is adjacent to and in contact with the aluminum material and the conductive material, and wherein a filament is removably disposed in a portion of the switching material, wherein the filament comprises a plurality of aluminum particles from the aluminum material.
12. The device of claim 11 wherein the resistive switching device is configured to have three or more non-volatile resistance states.
13. The device of claim 11 wherein a resistivity of the conductive material is lower than about 0.01 Ω·cm.
14. The device of claim 11 wherein the filament is removably disposed within the silicon material.
15. The device of claim 11 wherein the silicon material includes a plurality of defects and is characterized by a defect density.
16. The device of claim 15 , wherein the plurality of aluminum particles are removably disposed within defects from the plurality of defects.
17. The device of claim 11 , wherein the conductive material comprises p-doped polysilicon material.
18. The device of claim 11 wherein the first plurality of electrodes, the second plurality of electrodes, and the switching material are configured in a crossbar structure.
19. The device of claim 11 wherein the metal material of the first plurality of electrodes comprises copper.