Magnetic random access memory
View Patent ↗According to one embodiment, a magnetic random access memory includes a magnetoresistive element, a contact arranged under the magnetoresistive element and connected to the magnetoresistive element, and an insulating film continuously formed from a periphery of the contact to a side surface of the magnetoresistive element and including a protective portion covering the side surface of the magnetoresistive element.
1. A magnetic random access memory comprising:
a magnetoresistive element;
a contact portion arranged under the magnetoresistive element and connected to the magnetoresistive element;
a first insulating film formed at a periphery of the contact portion;
a second insulating film including a protective portion covering a side surface of the magnetoresistive element and including a material that is included in the first insulating film;
a third insulating film which contacts the first and second insulating films; and
a fourth insulating film which surrounds the side surface of the magnetoresistive element via the protective portion and the third insulating film.
2. The memory according to claim 1 , wherein the contact portion includes a contact and a lower electrode formed between the contact and the magnetoresistive element, and
wherein the lower electrode includes one of Ta, Zr, Hf, Al, and B.
3. The memory according to claim 1 , wherein the first insulating film includes one of an oxide and a nitride.
4. The memory according to claim 1 , wherein the first insulating film includes one of SiO2, SiN, SiON, AIN, and BN.
5. The memory according to claim 1 , wherein the third insulating film includes silicon nitride.
6. The memory according to claim 1 , the first and fourth insulating films include a same material.
7. The memory according to claim 6 , wherein the same material is silicon oxide.