Non-volatile variable resistive element, controlling device and storage device

1. A non-volatile resistive element comprising:

a variable resistive laver;

a first electrode including a first metal and placed at a first side of the variable resistive layer;

a second electrode including a second metal and placed at the first side of the variable resistive layer; and

a third electrode placed at a second side of the variable resistive layer;

the second side being opposed to the first side of the variable resistive laver, and the variable resistive layer being sandwiched between the first and second electrodes and the third electrode;

wherein a resistance of the variable resistive layer reduces when at least either one of the metal and the second metal is diffused into the variable resistive layer, and the resistance of the variable resistive layer increases when at least either one of the first metal and the second metal diffused into the variable resistive layer is collected by the first electrode or the second electrode.

2. The element according to claim 1 , wherein

a thickness of a part of the variable resistive layer lying between the first electrode and the third electrode differs from a thickness of the other part of the variable resistive layer lying between the second electrode and the third electrode.

3. The element according to claim 1 , wherein

a thickness of a part of the variable resistive layer lying between the second electrode and the third electrode is thinner than a thickness of the other part of the variable resistive layer lying between the first electrode and the third electrode.

4. The element according to claim 1 , wherein

a distance between the first electrode and the third electrode is greater than a distance between the second electrode and the third electrode.

5. The element according to claim 1 , wherein

at least one between a data retention characteristic and a number of cyclings of a conductive filament formed in the variable resistive layer by the second metal differs from a data retention characteristic or a number of cyclings of a conductive filament formed in the variable resistive layer by the first metal.

6. The element according to claim 5 , wherein

a thickness of a part of the variable resistive layer lying between the second electrode and the third electrode is thinner than a thickness of the other part of the variable resistive layer lying between the first electrode and the third electrode.

7. The element according to claim 1 , wherein

a minimum voltage value for diffusing the first metal into the variable resistive layer is smaller than a minimum voltage value for diffusing the second metal into the variable resistive layer.

8. The element according to claim 1 , wherein

a period of time for the second metal to diffuse into the variable resistive layer when a first voltage is impressed is longer than a period of time for the first metal to diffuse into the variable resistive layer when the first voltage is impressed, and

a period of time for the second metal to diffuse into the variable resistive layer when a second voltage of which voltage value is larger than a voltage value of the first voltage is impressed is shorter than a period of time for the first metal to diffuse into the variable resistive layer when the second voltage is impressed.

9. The element according to claim 1 , further comprising:

a first wiring contacting with the first and second electrodes; and

a second wiring contacting with the third electrode, wherein

the first wiring and the second wiring sandwich the first to third electrodes and the variable resistive layer therebetween, and

the first electrode is located on a side face of the second electrode so that the second electrode is surrounded by the first electrode.

10. The element according to claim 1 , further comprising:

a first wiring on which the first electrode is located directly; and

a second wiring lying above the first wiring and under which the third electrode is located directly, wherein

the first wiring and the second wiring sandwich the first to third electrode and the variable resistive layer therebetween, and

the second electrode is located directly on the first electrode.

11. The element according to claim 10 , wherein

a stack structure constructed by the first electrode and the second electrode has a tapered shape in which a face of the first electrode contacting with the first wiring is greater than a face of the second electrode facing the third electrode.