CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE CRYSTAL AND GROUP-III NITRIDE SEMICONDUCTOR DEVICE
A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.
1 - 58 . (canceled)
59 . A crystal production method, comprising
re-evaporating an alkaline metal condensed to the outside of a first reaction vessel when growing a crystal of a group-III nitride in the first reaction vessel using a mixed molten liquid containing the alkaline metal and at least a group-III metal, and a nitrogen material brought from the outside of the first reaction vessel.
60 . The crystal production method as claimed in claim 59 , wherein
in the re-evaporating, the alkaline metal condensed to a zone through which the nitrogen material outside the first reaction vessel passes is re-evaporated.
61 . The crystal production method as claimed in claim 60 , wherein
in the re-evaporating, the zone through which the nitrogen material passes is heated to re-evaporate the alkaline metal.