Monolithic integrated composite group III-V and group IV device
According to one disclosed embodiment, a method for fabricating a monolithic integrated composite device comprises forming a group III-V semiconductor body over a group IV semiconductor substrate, forming a trench in the group III-V semiconductor body, and forming a group IV semiconductor body in the trench. The method also comprises fabricating at least one group IV semiconductor device in the group IV semiconductor body, and fabricating at least one group III-V semiconductor device in the group III-V semiconductor body. In one embodiment, the method further comprises planarizing an upper surface of the III-V semiconductor body and an upper surface of the group IV semiconductor body to render those respective upper surfaces substantially co-planar. In one embodiment, the method further comprises fabricating at least one passive device in a defective region of said group IV semiconductor body adjacent to a sidewall of the trench.
1. A monolithic integrated composite device comprising:
a group IV semiconductor body formed in a trench in a group III-V semiconductor body situated over a group IV semiconductor substrate, said group IV semiconductor body including first and second defective regions adjacent to respective first and second sidewalls of said trench; and
at least one passive device fabricated in at least one of said first and said second defective regions.
2. The monolithic integrated composite device of claim 1 , wherein said at least one passive device fabricated in at least one of said first and second defective regions comprises a capacitor.
3. The monolithic integrated composite device of claim 1 , wherein said group IV semiconductor body comprises an epitaxial body grown in said trench.
4. The monolithic integrated composite device of claim 1 , wherein said group IV semiconductor body comprises silicon.
5. The monolithic integrated composite device of claim 1 , wherein said group III-V semiconductor body comprises a plurality of III-nitride semiconductor layers.
6. The monolithic integrated composite device of claim 1 , wherein said group III-V semiconductor body comprises a heterojunction formed at an interface of a gallium nitride (GaN) layer and an aluminum gallium nitride (AlGaN) layer.
7. The monolithic integrated composite device of claim 1 , further comprising:
at least one group IV semiconductor device fabricated in said group IV semiconductor body; and
at least one group III-V semiconductor device fabricated in said group III-V semiconductor body.
8. A monolithic integrated composite device comprising:
a group IV semiconductor body formed in a trench in a group III-V semiconductor body situated over a group IV semiconductor substrate, said group IV semiconductor body including a first defective region adjacent to a first sidewall of said trench;
at least one passive device fabricated in said first defective region.
9. The monolithic integrated composite device of claim 8 , wherein said at least one passive device comprises a capacitor.
10. The monolithic integrated composite device of claim 8 , wherein said group IV semiconductor body comprises an epitaxial body grown in said trench.
11. The monolithic integrated composite device of claim 8 , wherein said group IV semiconductor body comprises silicon.
12. The monolithic integrated composite device of claim 8 , wherein said group III-V semiconductor body comprises a plurality of III-nitride semiconductor layers.
13. The monolithic integrated composite device of claim 8 , wherein said group III-V semiconductor body comprises a heterojunction formed at an interface of a gallium nitride (GaN) layer and an aluminum gallium nitride (AlGaN) layer.
14. The monolithic integrated composite device of claim 8 , further comprising:
at least one group IV semiconductor device fabricated in said group IV semiconductor body;
at least one group III-V semiconductor device fabricated in said group III-V semiconductor body.