IP Library Granted Patent US 9,385,092
Granted Patent B2
US 9,385,092 · App. 13/972,480 · Granted Jul 5, 2016

Semiconductor device, electronic device and method for fabricating the semiconductor device

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Quick Facts
Patent No.
US 9,385,092
App. No.
13/972,480
Granted
Jul 5, 2016
Kind
B2
Abstract

A semiconductor device includes a substrate, a semiconductor chip mounted on the substrate, a plate-like member that is fixed on the semiconductor chip and has a thermal expansion coefficient different from that of the substrate, and a first adhesive that is provided between the substrate and the plate-like member, the first adhesive being connected to the plate-like member and separated from the substrate, or being separated from the plate-like member and connected to the substrate.

Claims (23)

1. A semiconductor device comprising:

a substrate;

a semiconductor chip mounted on the substrate;

a plate-like member that is fixed on the semiconductor chip and has a thermal expansion coefficient different from that of the substrate; and

a first adhesive that is provided between the substrate and the plate-like member, a whole of the first adhesive being separated from the semiconductor chip, and the whole of the first adhesive being located around the semiconductor chip in a plan view,

wherein a whole upper surface of the first adhesive is directly adhered to the plate-like member, a whole lower surface of the first adhesive is not fixed to the substrate and other adhesive member is not provided between the whole lower surface of the first adhesive and the substrate, or a whole upper surface of the first adhesive is not fixed to the plate-like member, the other adhesive member is not provided between the whole upper surface of the first adhesive and the plate-like member and a whole lower surface of the first adhesive is directly adhered to the substrate.

2. The semiconductor device according to claim 1 , wherein the first adhesive is separated from the substrate or the plate-like member at a first temperature.

3. The semiconductor device according to claim 1 , wherein the first adhesive is separated from the substrate or the plate-like member by a current flow through the first adhesive.

4. The semiconductor device according to claim 1 , wherein an area of the upper surface is different from an area of the lower surface.

5. The semiconductor device according to claim 1 , wherein a first roughness of a part of the substrate which faces the lower surface of the first adhesive is different from a second roughness of a part of the plate-like member which faces the upper surface of the first adhesive.

6. The semiconductor device according to claim 5 , wherein

the second roughness is larger than the first roughness,

the first adhesive is not fixed to the substrate, and

the first adhesive is directly adhered with the plate-like member.

7. The semiconductor device according to claim 1 , wherein the first adhesive has a shape having a decreasing width from one of the substrate and the plate-like member toward the other.

8. The semiconductor device according to claim 1 , further comprising a second adhesive provided between the semiconductor chip and the first adhesive in a plan view, that contacts with the substrate and the plate-like member.

9. The semiconductor device according to claim 8 , wherein the second adhesive is smaller than the first adhesive in a plan view.

10. The semiconductor device according to claim 8 , wherein the second adhesive is nearer to the semiconductor chip than the first adhesive.

11. The semiconductor device according to claim 1 , wherein the first adhesive is provided so as to form a gap between the first adhesive and the substrate or between the first adhesive and the plate-like member.

12. The semiconductor device according to claim 1 , wherein the substrate has a rectangular shape,

a plurality of the first adhesives are provided in corner portions of the substrate respectively, and

the first adhesives are separated from each other.

13. The semiconductor device according to claim 1 , further comprising a solder ball on the surface, that is on the other side semiconductor chip mounted on the substrate, wherein the solder ball has a melting point lower than the first temperature.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 17, 2015
From: FUJITSU SEMICONDUCTOR LIMITED
To: SOCIONEXT INC.
Reel/Frame 035453/0904 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2013
From: IHARA, TAKUMI
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 031055/0090 →