Light emitting device, driving method of light emitting device and electronic device
By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.
1. A light-emitting device comprising:
a signal line and a scan line over a substrate;
a first transistor and a second transistor over the substrate, each comprising:
a first electrode;
a first insulating film over the first electrode;
a semiconductor film over the first insulating film;
a second insulating film over the semiconductor film;
a second electrode over the second insulating film; and
a light-emitting element over the substrate,
wherein the signal line is electrically connected to the semiconductor film of the first transistor,
wherein the scan line is electrically connected to the first electrode and the second electrode of the first transistor,
wherein the first electrode and the second electrode of the second transistor are electrically connected to the semiconductor film of the first transistor, and
wherein the light emitting element is electrically connected to the semiconductor film of the second transistor.
2. The light-emitting device according to claim 1 , wherein the first transistor is a n-channel type thin film transistor, and the second transistor is a p-channel type thin film transistor.
3. The light-emitting device according to claim 1 , wherein the semiconductor film is silicon.
4. The light-emitting device according to claim 1 , wherein the semiconductor film is wider than the first electrode and the second electrode.
5. The light-emitting device according to claim 1 , wherein the second electrode includes a tapered cross section.
6. The light-emitting device according to claim 1 , wherein the light-emitting device is incorporated in one selected from the group consisting of a camera, a computer, a goggle-type display, and a telephone.
7. A light-emitting device comprising:
a signal line and a scan line over a substrate;
a first transistor and a second transistor over the substrate, each comprising:
a first electrode including a tapered cross section;
a first insulating film over the first electrode;
a semiconductor film over the first insulating film;
a second insulating film over the semiconductor film;
a second electrode over the second insulating film; and
a light-emitting element over the substrate,
wherein the signal line is electrically connected to the semiconductor film of the first transistor,
wherein the scan line is electrically connected to the first electrode and the second electrode of the first transistor,
wherein the first electrode and the second electrode of the second transistor are electrically connected to the semiconductor film of the first transistor, and
wherein the light emitting element is electrically connected to the semiconductor film of the second transistor.
8. The light-emitting device according to claim 7 , wherein the first transistor is a n-channel type thin film transistor, and the second transistor is a p-channel type thin film transistor.
9. The light-emitting device according to claim 7 , wherein the semiconductor film is silicon.
10. The light-emitting device according to claim 7 , wherein the semiconductor film is wider than the first electrode and the second electrode.
11. The light-emitting device according to claim 7 , wherein the second electrode includes a tapered cross section.
12. The light-emitting device according to claim 7 , wherein the light-emitting device is incorporated in one selected from the group consisting of a camera, a computer, a goggle-type display, and a telephone.
13. A light-emitting device comprising:
a signal line and a scan line over a substrate;
a first transistor and a second transistor over the substrate, each comprising:
a first electrode;
a first insulating film including a pair of laminated insulating films over the first electrode;
a semiconductor film over the first insulating film;
a second insulating film over the semiconductor film;
a second electrode over the second insulating film; and
a light-emitting element over the substrate,
wherein the signal line is electrically connected to the semiconductor film of the first transistor,
wherein the scan line is electrically connected to the first electrode and the second electrode of the first transistor,
wherein the first electrode and the second electrode of the second transistor are electrically connected to the semiconductor film of the first transistor, and
wherein the light emitting element is electrically connected to the semiconductor film of the second transistor.
14. The light-emitting device according to claim 13 , wherein the first transistor is a n-channel type thin film transistor, and the second transistor is a p-channel type thin film transistor.
15. The light-emitting device according to claim 13 , wherein the semiconductor film is silicon.
16. The light-emitting device according to claim 13 , wherein the semiconductor film is wider than the first electrode and the second electrode.
17. The light-emitting device according to claim 13 , wherein the second electrode includes a tapered cross section.
18. The light-emitting device according to claim 13 , wherein the light-emitting device is incorporated in one selected from the group consisting of a camera, a computer, a goggle-type display, and a telephone.