Semiconductor device
A semiconductor device includes a multilayer substrate, a semiconductor element secured to an upper surface of the multilayer substrate, a first metal pattern located on a portion of a lower surface of the multilayer substrate, a dielectric having a higher permittivity than the multilayer substrate and located on the lower surface of the multilayer substrate, and a bottom surface electrode located on a bottom surface of the semiconductor device. The bottom surface electrode, the dielectric, and the first metal pattern together form a bypass capacitor.
1. A semiconductor device comprising:
a multilayer substrate having upper and lower surfaces and a permittivity;
a semiconductor element secured to said upper surface of said multilayer substrate;
an intra-substrate via that is connected electrically to said semiconductor element and located in said multilayer substrate, extending to said lower surface of said multilayer substrate;
a first metal pattern located on a portion of said lower surface of said multilayer substrate;
a second metal pattern in contact with a lower end of said intra-substrate via;
a dielectric having a higher permittivity than the permittivity of said multilayer substrate and located on said lower surface of said multilayer substrate, covering said first and second metal patterns;
a first intra-dielectric via located in said dielectric, connected at an upper end to said first metal pattern, and extending to a lower surface of said dielectric;
a second intra-dielectric via located in said dielectric, connected at an upper end to said second metal pattern, and extending to said lower surface of said dielectric;
a ground pattern connected to a lower end of said first intra-dielectric via; and
a bottom surface electrode connected to a lower end of said second intra-dielectric via, wherein
a portion of said first metal pattern is disposed on said dielectric directly opposite a portion of said bottom surface electrode, and
said bottom surface electrode, said dielectric, and said first metal pattern, together, constitute a bypass capacitor.
2. The semiconductor device according to claim 1 , wherein said dielectric has a relative permittivity of at least 1000.