Luminescent device and manufacturing method for luminescent device and semiconductor device
A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer.
1. A luminescent device having a semiconductor layer including a luminescent layer on a supporting substrate,
the supporting substrate having a concave shape,
the semiconductor layer being at a bottom of the concave shape and being connected to the supporting substrate through a foundation layer, and
the supporting substrate, wherein the columnar shapes have convex portions with columnar shapes having a top surface parallel to a surface of the semiconductor layer, wherein the columnar shapes are constituted by the foundation layer at summits of the concave shape of the supporting substrate, wherein each of the convex portions is formed around the semiconductor layer independently from each other and from the semiconductor layer in a planar view and wherein the foundation layer extends continuously from a region below the luminescent layer to the columnar shapes.
2. The luminescent device of claim 1 , wherein the leakage current flowing when a reverse voltage of 10 volts is applied is less than 10 μA.