IP Library › Granted Patent US 9,123,840
Granted Patent B2
US 9,123,840 · App. 13/982,230 · Granted Sep 1, 2015

Solar cell element manufacturing method, solar cell element, and solar cell module

Inventors: Manabu Komoda (Omihachimanshi, JP); Yasuhiro Okada (Yasu, JP); Yuusuke Nagou (Higashiomi, JP); Takeshi Ito (Higashiomi, JP); Hitohiko Nakamura (Yasu, JP)
Assignee: KYOCERA Corporation
H01L31/0352H01L31/02363H01L31/068Y02E10/547
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Quick Facts
Patent No.
US 9,123,840
App. No.
13/982,230
Granted
Sep 1, 2015
Kind
B2
Abstract

A method for manufacturing a solar cell element is disclosed. The method includes two different etching processes followed by forming a semiconductor layer. A semiconductor substrate having a first conductor type is etched by using a first acid aqueous solution containing hydrofluoric acid, nitric acid, and sulfuric acid. Then, the semiconductor substrate is etched by using a second acid aqueous solution containing hydrofluoric acid and nitric acid with substantially no sulfuric acid to make an uneven surface. A semiconductor layer of second conductivity type different from the first conductivity type is formed on at least a part of the uneven surface of the semiconductor substrate.

Claims (11)

1. A method for manufacturing a solar cell element, the method comprising:

etching a first main surface of a semiconductor substrate having a first conductivity type, using a first acid aqueous solution containing hydrofluoric acid, nitric acid, and sulfuric acid to obtain a first etched surface;

etching the first etched surface using a second acid aqueous solution containing hydrofluoric acid and nitric acid with substantially no sulfuric acid to obtain a second etched surface having an uneven surface; and

forming a semiconductor layer on at least a part of the second etched surface, the layer having a second conductivity type different from the first conductivity type.

2. The method according to claim 1 , wherein the second acid aqueous solution has a temperature lower than that of the first acid aqueous solution.

3. The method according to claim 1 , wherein the second acid aqueous solution has a mass ratio of the nitric acid to the hydrofluoric acid higher than that of the first acid aqueous solution.

4. The method according to claim 1 , further comprising:

washing the first etched surface with water for a first period of time; and

washing the second etched surface with water for a second period of time longer than the first period.

5. The method according to claim 1 , wherein the substrate is immersed in the first acid aqueous solution with the first main surface substantially perpendicular to a fluid surface of the first acid aqueous solution.

6. The method according to claim 1 , further comprising preparing the substrate by slicing an ingot of a semiconductor material with a wire to which an abrasive is fixed.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2013
From: KOMODA, MANABU; OKADA, YASUHIRO; NAGOU, YUUSUKE; ITO, TAKESHI; NAKAMURA, HITOHIKO
To: KYOCERA CORPORATION
Reel/Frame 030887/0593 →
Priority Claims (2)
JP 2011-014715 · Jan 27, 2011 · national
JP 2011-042196 · Feb 28, 2011 · national
Continuity (1)
Related Publication 20140000675A1 · Jan 2, 2014