METHOD FOR PRODUCING SILICON DIOXIDE FILM
[Problem] To provide a method capable of forming an insulating film suffering less from both shrinkage and stress. [Means for solving] A method for forming a silicon dioxide film, comprising the steps of: coating a substrate with a polysilazane composition to form a coat, and then heating the formed coat in a hydrogen peroxide atmosphere at 50 to 200° C. This method enables to form isolation structures such as various insulating films.
1 . A method for forming a silicon dioxide film, comprising
(A) a coating step, in which a substrate is coated with a polysilazane composition to form a coat; and
(B) an oxidation step, in which the coat is oxidized in a hydrogen peroxide atmosphere at a temperature of 50 to 200° C.
2 . The method according to claim 1 for forming a silicon dioxide film, wherein the oxidation step is carried out at a temperature of 100 to 200° C.
3 . The method according to claim 1 for forming a silicon dioxide film, wherein the hydrogen peroxide atmosphere contains 5 to 50 mol % of hydrogen peroxide in the oxidation step.
4 . The method according to claim 1 for forming a silicon dioxide film, wherein the hydrogen peroxide atmosphere contains 5 to 50 mol % of water vapor in the oxidation step.
5 . The method according to claim 1 for forming a silicon dioxide film, wherein the heating time ranges from 0.5 to 60 minutes in the oxidation step.
6 . The method according to claim 1 for forming a silicon dioxide film, further comprising
a step of removing the solvent after the coating step and before the oxidation step.
7 . The method according to claim 1 for forming a silicon dioxide film, furthermore comprising
a step of oxidation with water vapor, in which the coat is heated in a water vapor atmosphere at a temperature of 300 to 1000° C. after the oxidation step.
8 . The method according to claim 1 for forming a silicon dioxide film, wherein the polysilazane composition contains solid content in an amount of 1 to 40 wt % based on the total weight of the composition.
9 . The method according to claim 1 for forming a silicon dioxide film, wherein the coat formed in the coating step has a thickness of 5 to 10000 nm.
10 . The method according to claim 1 for forming a silicon dioxide film, wherein the substrate is made of plastics.
11 . A method for forming an isolation structure; wherein the method according to claim 1 is applied to form a silicon dioxide film on a substrate having grooves or holes on the surface, so as to fill the grooves or holes in.
12 . The method according to claim 11 for forming an isolation structure, wherein the silicon dioxide film serves as an inter-metal dielectric film or as a pre-metal dielectric film.
13 . The method according to claim 11 for forming an isolation structure, wherein the silicon dioxide film constitutes a shallow trench isolation structure.
14 . The method according to claim 13 for forming an isolation structure, wherein the grooves have widths of 5 to 50 nm and aspect ratios of 10 to 100.