IP Library Granted Patent US 8,952,525
Granted Patent B2
US 8,952,525 · App. 13/983,291 · Granted Feb 10, 2015

Semiconductor module and method for manufacturing semiconductor module

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Quick Facts
Patent No.
US 8,952,525
App. No.
13/983,291
Granted
Feb 10, 2015
Kind
B2
Abstract

A semiconductor module includes a case including a receiving space that is formed by a frame portion and a pair of wall portions disposed to face each other with the frame portion therebetween. The wall portion includes a heat-dissipation portions and a support wall that supports the heat-dissipation portions at the frame portion, and the wall portion includes a heat-dissipation portion and a support wall that supports the heat-dissipation portion at the frame portion. The heat-dissipation portions provided at the wall portion are separately provided by being disposed to face a plurality of semiconductor device blocks respectively. A plurality of separate heat-dissipation portions is surrounded by the support wall, the support wall is deformed to recessed from the frame portion through the separate heat-dissipation portions inside the case such that a plurality of insulating sheets is closely joined to a plurality of lead frames and the plurality of heat-dissipation portions.

Claims (27)

1. A semiconductor module comprising:

a case including a receiving space which is formed by a frame portion and a pair of wall portions disposed to face each other with the frame portion therebetween, the pair of wall portions including a heat dissipation portion and a support wall which supports the heat dissipation portion at the frame portion;

a plurality of semiconductor device blocks which are disposed in parallel in the receiving space while facing the wall portion, wherein a conductor plate is joined to each of electrode surfaces formed at both sides of a semiconductor device;

a plurality of insulating sheet members which are respectively interposed between the respective conductor plates and an inner periphery of the wall portion to insulate the respective conductor plates and the inner periphery of the wall portion; and

a resin composition member which is filled in the receiving space to seal the plurality of semiconductor device blocks, wherein

the heat dissipation portion provided on at least one side of the wall portion includes a plurality of separate heat dissipation portions disposed to face the plurality of semiconductor device blocks respectively, and

the plurality of separate heat dissipation portions is surrounded by the support wall, the support wall is deformed to be recessed from the frame portion through the separate heat dissipation portion inside the case such that the plurality of insulating sheet members is closely joined to the plurality of conductor plates and the plurality of separate heat dissipation portions respectively.

2. The semiconductor module according to claim 1 , wherein

the conductor plate includes a connection portion which is bent and formed a semiconductor device side and is connected to the conductor plate of the other semiconductor device blocks disposed in parallel.

3. The semiconductor module according to claim 1 , wherein

the conductor plate has an inclined surface or an uneven surface formed at an end portion of a surface facing the insulating sheet member, and

the resin composition member is filled into a gap between the inclined surface or the uneven surface and the insulating sheet member.

4. The semiconductor module according to claim 1 , wherein

a thermal conductivity of the insulating sheet member is higher than a thermal conductivity of the resin composition member.

5. The semiconductor module according to claim 1 , wherein

a polyamide resin layer is formed between the semiconductor device block, the insulating sheet member, the inner periphery of the case, and the resin composition member.

6. The semiconductor module according to claim 1 , comprising:

a position determining unit which determines a position of the plurality of semiconductor device blocks in the receiving space.

7. A method for manufacturing the semiconductor module according to claim 1 , comprising:

fixing the insulating sheet member to the conductor plate provided in the semiconductor device block;

disposing the plurality of semiconductor device blocks, to which the insulating sheet member is fixed, in parallel in the receiving space such that the insulating sheet member faces the corresponding separate heat dissipation portion;

pressing each of the separate heat dissipation portions toward the inside of the case to deform the support wall and join the separate heat dissipation portion closely to the insulating sheet member; and

filling the resin composition member into the receiving space to seal the plurality of semiconductor device blocks.

8. The method according to claim 7 , wherein

after deforming the support wall and joining the separate heat dissipation portion closely to the insulating sheet member,

the polyamide resin layer is formed by attaching a polyamide resin to the inner periphery of the case and the plurality of semiconductor device blocks received in the receiving space, and

the plurality of semiconductor device blocks is sealed by filling the resin composition member into the receiving space.

Assignments (2)
CHANGE OF NAME Recorded Mar 25, 2021
From: HITACHI AUTOMOTIVE SYSTEMS, LTD.
To: HITACHI ASTEMO, LTD.
Reel/Frame 056299/0447 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 23, 2014
From: IDE, EIICHI; TOKUYAMA, TAKESHI; TSUYUNO, NOBUTAKE; NAKATSU, KINYA; SUWA, TOKIHITO; KANEKO, YUUJIRO
To: HITACHI AUTOMOTIVE SYSTEMS, LTD.
Reel/Frame 032953/0892 →