Phosphor, production method for the same, and light-emitting device
View Patent ↗A phosphor with a high light-emitting intensity, indicated by general formula Me a Re b Si c Al d —N e O f . In the formula: Me has Sr as an essential element thereof and can include one or more types of element selected from Na, Li, Mg, Ca, Ba, Sc, Y, and La; and Re has Eu as an essential element thereof and can include one or more types of element selected from Mn, Ce, Tb, Yb, and Sm. When a=1−x, b=x, c=(2+2p)×(1−y), d=(2+2p)×y, e=(1+4p)×(1−z), and f=(1+4p)×z, parameters, p, x, y, and z fulfill the following: 1.610<p<1.620, 0.005<x<0.300, 0.190<y<0.260, and 0.060<z<0.120. A light-emitting device with high luminance is provided by using this phosphor.
1. A phosphor represented by general formula Me a Re b Si c Al d N e O f (Me is Sr; and Re is Eu), wherein
the phosphor is described by a crystal structure model represented as (Me 1-x Re x M 2 X) m (M 2 X 4 ) n (m and n are integers satisfying the relation 1.610<n/m<1.620; M is one or more elements selected from Si and Al; and X is one or more elements selected from O and N), wherein
when a, b, c, d, e, and f representing composition ratio satisfy the following formulae:
a =1 −x,
b=x,
c =(2+2 p )×(1 −y ),
d =(2+2 p )× y,
e =(1+4 p )×(1 −z ), and
f =(1+4 p )× z,
parameters p=n/m, x, y, and z fall within the following range:
p=1.615,
x=0.013,
y=0.191, 0.221 or 0.250, and
z=0.062, 0.082 or 0.103, wherein
the phosphor is excited by light having wavelengths falling within a range from 300 nm to 500 nm and has emission peak wavelengths falling within a range from 495 nm to 530 nm, and wherein the phosphor has no second phase.
2. A method for producing the phosphor as set forth in claim 1 , comprising, a mixing process for mixing raw materials; and a burning process for burning a mixture having undergone the mixing process, wherein the raw materials are:
(1) one or more compounds selected from nitrides, carbides, hydrides, silicides, carbonates, and oxides of Sr,
(2) one or more compounds selected from nitrides, hydrides, carbides, halides, and oxides of Eu,
(3) one or more compounds selected from silicon nitride, silicon oxide, silicon oxynitride, and silicon metal, and
(4) one or more compounds selected from aluminum nitride, aluminum oxide, aluminum oxynitride, and aluminum metal.
3. The method for producing the phosphor as set forth in claim 2 , wherein the burning process is performed under ambient pressure of 0.1 MPa or higher and at temperatures falling within a range from 1600° C. to 2000° C.
4. The method for producing the phosphor as set forth in claim 2 , further comprising an annealing process where the phosphor having undergone the burning process is annealed at temperatures falling within a range from 1200° C. to 1900° C.
5. The method for producing the phosphor as set forth in claim 2 , wherein the raw materials in the mixing process contain the phosphor obtained in the burning process.
6. A light-emitting device comprising:
a light-emitting element; and the phosphor as set forth in claim 1 .
7. The light-emitting device as set forth in claim 6 , further comprising one or more additional phosphors having emission peak wavelengths longer than those of the phosphor.
8. The light-emitting device as set forth in claim 6 , wherein the light-emitting element is either inorganic or organic light-emitting element that emits light having wavelengths falling within a range from 340 nm to 500 nm.
9. The light-emitting device as set forth in claim 6 the light-emitting device is a backlight for LC TVs, light-source system for projectors, lighting system, or signaling device.