-NH- terminated silicon surface and a method for its preparation
A uniform Si—NH—Si terminated Si(111) surface is formed by contacting a chlorine-terminated silicon surface with ammonia and a solvent such as an ether.
1. A silicon material having a silicon surface, wherein the silicon surface contains Si—NH—Si functionality, at least about 80% of the Si atoms on the silicon surface are part of an Si—NH—Si functional group, the Si—NH—Si functional groups form a monolayer on the silicon surface, and the silicon surface is stable for several days in anhydrous tetrahydrofuran under nitrogen.
2. The silicon material of claim 1 , wherein the silicon surface is a Si(111) single crystalline surface.
3. The silicon material of claim 1 , wherein at least about 90% of the Si atoms on the silicon surface are part of an Si—NH—Si functional group.
4. A method of manufacturing a silicon material, comprising contacting a chlorinated silicon surface with ammonia and a solvent to produce a silicon material having a silicon surface, wherein the silicon surface contains Si—NH—Si functionality, at least about 80% of the Si atoms on the silicon surface are part of an Si—NH—Si functional group, the Si—NH—Si functional groups form a monolayer on the silicon surface, and the silicon surface is stable for several days in anhydrous tetrahydrofuran under nitrogen.
5. The method of claim 4 , wherein the silicon surface is an Si(111) single crystalline surface.
6. The method of claim 4 , wherein the contacting is carried out in the substantial absence of O 2 .
7. The method of claim 4 , wherein the contacting is carried out in the substantial absence of water.
8. The method of claim 4 , wherein the contacting is carried out in the substantial absence of both O 2 and water.
9. The method of claim 4 , wherein the solvent is an ether.
10. The method of claim 9 , wherein the ether is an aliphatic ether.
11. The method of claim 9 , wherein the ether is a cyclic ether.
12. The method of claim 9 , wherein the ether is tetrahydrofuran.
13. The method of claim 4 , wherein the contacting is carried out using ammonia-saturated tetrahydrofuran.
14. The method of claim 4 , wherein the contacting is carried out for a period of time of from five minutes to ten hours at a temperature of from 0° C. to 50° C.
15. The method of claim 4 , wherein the chlorinated silicon surface has been obtained by reacting an H-terminated Si(111) surface with a chlorine-containing compound.
16. The method of claim 15 , wherein the chlorine-containing compound is PCI 5 .