Spin transfer torque memory (STTM) device with half-metal and method to write and read the device
View Patent ↗Spin transfer torque memory (STTM) devices with half-metals and methods to write and read the devices are described. For example, a magnetic tunneling junction includes a free magnetic layer, a fixed magnetic layer, and a dielectric layer disposed between the free magnetic layer and the fixed magnetic layer. One or both of the free magnetic layer and the fixed magnetic layer includes a half-metal material at an interface with the dielectric layer.
1. A magnetic tunneling junction, comprising:
a free magnetic layer;
a fixed magnetic layer; and
a dielectric layer disposed between the free magnetic layer and the fixed magnetic layer, wherein one or both of the free magnetic layer and the fixed magnetic layer comprises a half-metal material at an interface with the dielectric layer, and wherein the half-metal material consists of Fe 3 Si.
2. The magnetic tunneling junction of claim 1 , wherein only the fixed magnetic layer comprises a half-metal material at the interface with the dielectric layer.
3. The magnetic tunneling junction of claim 2 , wherein the fixed magnetic layer further comprises a ferroelectric material adjacent the half-metal material, distal from the interface of the fixed magnetic layer with the dielectric layer.
4. The magnetic tunneling junction of claim 2 , wherein the free magnetic layer comprises a ferroelectric material.
5. The magnetic tunneling junction of claim 4 , wherein the free magnetic layer further comprises a half-metal material adjacent the ferroelectric material, distal from the interface of the free magnetic layer with the dielectric layer.
6. The magnetic tunneling junction of claim 1 , wherein the half-metal material is a ferromagnetic metal alloy based on a Heusler phase.
7. The magnetic tunneling junction of claim 1 , further comprising an anti-ferromagnetic layer adjacent the fixed magnetic layer, distal from the interface of the fixed magnetic layer with the dielectric layer.
8. A non-volatile memory device, comprising:
a first electrode;
a fixed magnetic layer disposed above the first electrode;
a free magnetic layer disposed above the fixed magnetic layer;
a second electrode disposed above the free magnetic layer;
a dielectric layer disposed between the free magnetic layer and the fixed magnetic layer, wherein one or both of the free magnetic layer and the fixed magnetic layer comprises a half-metal material at an interface with the dielectric layer, and wherein the half-metal material is Fe 3 Si; and
a transistor electrically connected to the first or the second electrode, a source line, and a word line.
9. The non-volatile memory device of claim 8 , wherein the transistor is electrically connected to the first electrode, the source line, and the word line.
10. The non-volatile memory device of claim 8 , wherein the transistor is electrically connected to the second electrode, the source line, and the word line.
11. The non-volatile memory device of claim 8 , further comprising an anti-ferromagnetic layer disposed between the fixed magnetic layer and the first electrode.
12. The non-volatile memory device of claim 8 , wherein only the fixed magnetic layer comprises a half-metal material at the interface with the dielectric layer.
13. The non-volatile memory device of claim 12 , wherein the fixed magnetic layer further comprises a ferroelectric material disposed between the half-metal material and the first electrode, distal from the interface of the fixed magnetic layer with the dielectric layer.
14. The non-volatile memory device of claim 12 , wherein the free magnetic layer comprises a ferroelectric material.
15. The non-volatile memory device of claim 14 , wherein the free magnetic layer further comprises a half-metal material disposed between the ferroelectric material and the second electrode, distal from the interface of the free magnetic layer with the dielectric layer.
16. The non-volatile memory device of claim 8 , wherein the half-metal material is a ferromagnetic metal alloy based on a Heusler phase.
17. A magnetic tunneling junction, comprising:
a free magnetic layer;
a fixed magnetic layer; and
a dielectric layer disposed between the free magnetic layer and the fixed magnetic layer, wherein one or both of the free magnetic layer and the fixed magnetic layer comprises a half-metal material at an interface with the dielectric layer, and wherein the half-metal material comprises Fe 3 Si.
18. The magnetic tunneling junction of claim 17 , wherein only the fixed magnetic layer comprises a half-metal material at the interface with the dielectric layer.
19. The magnetic tunneling junction of claim 18 , wherein the fixed magnetic layer further comprises a ferroelectric material adjacent the half-metal material, distal from the interface of the fixed magnetic layer with the dielectric layer.
20. The magnetic tunneling junction of claim 18 , wherein the free magnetic layer comprises a ferroelectric material.
21. The magnetic tunneling junction of claim 20 , wherein the free magnetic layer further comprises a half-metal material adjacent the ferroelectric material, distal from the interface of the free magnetic layer with the dielectric layer.
22. The magnetic tunneling junction of claim 17 , wherein the half-metal material is a ferromagnetic metal alloy based on a Heusler phase.
23. The magnetic tunneling junction of claim 17 , further comprising
an anti-ferromagnetic layer adjacent the fixed magnetic layer, distal from the interface of the fixed magnetic layer with the dielectric layer.