Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %.
1. A semiconductor processing apparatus comprising a substrate having at least one surface having a coating formed thereon, wherein the coating comprises a ceramic which is resistant to erosion by halogen-containing plasmas, wherein the ceramic comprises zirconium oxide at a molar concentration ranging from 96 mole % to 94 mole % and yttrium oxide at a molar concentration ranging from 4 mole % to 6 mole %, wherein the ceramic exhibits a flexural strength of from about 1100 MPa to about 1300 MPa, and wherein the ceramic has a mean grain size from about 0.5 μm to about 8.0 μm.
2. The semiconductor processing apparatus in accordance with claim 1 , wherein underlying the ceramic is a high purity aluminum alloy.
3. The semiconductor processing apparatus in accordance with claim 1 , wherein the apparatus is selected from the group consisting of a lid, a lid liner, a nozzle, a gas distribution plate, a shower head, an electrostatic chuck component, a shadow frame, a substrate holding frame, a processing kit, and a chamber liner.
4. A semiconductor processing apparatus, the apparatus comprising a substrate having at least one surface having a coating formed thereon, wherein the coating comprises a ceramic which is resistant to erosion by halogen-containing plasmas, wherein the ceramic consists essentially of zirconium oxide at a molar concentration ranging from 96 mole % to 94 mole % and yttrium oxide at a molar concentration ranging from 4 mole % to 6 mole %, and wherein the ceramic has a mean grain size from about 0.5 μm to about 8.0 μm.
5. The semiconductor processing apparatus in accordance with claim 4 , wherein the ceramic exhibits a flexural strength of from about 1100 MPa to about 1300 MPa.
6. The semiconductor processing apparatus in accordance with claim 1 , wherein the ceramic exhibits a fracture toughness from about 10 MPa·m 1/2 to about 12 MPa·m 1/2 .
7. The semiconductor processing apparatus in accordance with claim 4 , wherein the ceramic exhibits a fracture toughness from about 10 MPa·m 1/2 to about 12 MPa·m 1/2 .