Method for manufacturing semiconductor device and method for manufacturing microphone
A method for manufacturing a semiconductor device is provided, the method comprising: fabricating a semiconductor element on a semiconductor substrate; joining a surface of the semiconductor substrate to a support member, the surface being on a side where the semiconductor element is fabricated; and polishing a surface on an opposite side of the surface of the semiconductor substrate where the semiconductor element is fabricated and reducing a thickness of the semiconductor substrate, in a state where the semiconductor substrate and the support member are joined.
1. A method for manufacturing a semiconductor device, the method comprising:
fabricating a semiconductor element on a semiconductor substrate;
joining a surface of the semiconductor substrate to a support member, the surface being on a side where the semiconductor element is fabricated; and
polishing a surface on an opposite side of the surface of the semiconductor substrate where the semiconductor element is fabricated and reducing a thickness of the semiconductor substrate, in a state where the semiconductor substrate and the support member are joined,
wherein the support member is mounted on a circuit board, and
a conductor for electrically connecting the semiconductor element and the circuit board vertically penetrates the support member.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein
the semiconductor substrate is a wafer on which a plurality of the semiconductor elements are fabricated, and a plurality of the support members are formed by another wafer.
3. A method for manufacturing a microphone, the method comprising:
fabricating an acoustic sensor on a semiconductor substrate;
fabricating a support member by forming a cavity in a plate;
joining a surface of the semiconductor substrate to the support member, the surface being on a side where the acoustic sensor is fabricated;
polishing a surface on an opposite side of the surface of the semiconductor substrate where the acoustic sensor is fabricated and reducing a thickness of the semiconductor substrate, in a state where the semiconductor substrate and the support member are joined; and
mounting the acoustic sensor formed on the semiconductor substrate after a polishing process, the support member, and a signal processing circuit inside a package.
4. The method for manufacturing a microphone according to claim 3 , wherein
the cavity is a space for accommodating the signal processing circuit.
5. The method for manufacturing a microphone according to claim 3 , wherein
the cavity is a space that communicates with a back chamber of the acoustic sensor.
6. The method for manufacturing a microphone according to claim 3 , wherein
a conductor for electrically connecting the acoustic sensor and an electrode pad provided to the package vertically penetrates the support member.
7. The method for manufacturing a microphone according to claim 3 , wherein
the plate is another semiconductor substrate.
8. The method for manufacturing a microphone according to claim 3 , wherein
the semiconductor substrate is a wafer on which a plurality of the acoustic sensors are fabricated, and the plate is a wafer on which a plurality of the support members are fabricated.