Patterned graphene structures on silicon carbide

1. A method for making graphitic ribbons in a face of a carbide crystal, comprising the steps of:

(a) forming an elongated trench along a predetermined path in the face of the carbide crystal, the trench including a horizontal floor coupling two vertical sidewalls, the trench following a path on which it is desired to form a graphitic ribbon; and

(b) subjecting the carbide crystal and the trench to an annealing environment for an amount of time sufficient to cause a graphene ribbon having a V-shaped cross section to form along the predetermined path of the trench.

2. The method of claim 1 , further comprising the step of removing residual graphene from a top surface of the face of the carbide crystal.

3. The method of claim 1 , wherein the step of forming the elongated trench comprises the step of etching.

4. The method of claim 3 , wherein the etching step comprises the steps of focusing an ion beam onto the face of the crystal and moving the ion beam along the predetermined path, the ion beam having an intensity sufficient to remove material from the face of the carbide crystal.

5. The method of claim 3 , wherein the etching step comprises the steps of:

(a) applying a mask to the face of the carbide crystal, the mask exposing the predetermined path; and

(b) placing the carbide crystal and the mask in an environment that causes material to be removed from the carbide crystal for an amount of time sufficient to form the elongated trench.

6. The method of claim 5 , wherein the mask comprises a material selected from a group of materials consisting of: nickel and aluminum.

7. The method of claim 1 , wherein the two vertical sidewalls have a sidewall height and wherein the horizontal floor has a floor width, and wherein the floor width is narrow enough so that graphene layers forming on the sidewalls merge when the carbide crystal is subjected to the annealing environment.

8. The method of claim 7 , sidewall height is at least three times the floor width.

9. The method of claim 1 , wherein the carbide crystal comprises a silicon carbide crystal.

10. The method of claim 9 , wherein the step of subjecting the carbide crystal and the trench to an annealing environment comprises the steps of:

(a) placing the carbide crystal in a substantially sealed vessel;

(b) applying a vacuum to the sealed vessel; and

(c) heating the sealed vessel to a temperature at which silicon boils off from the silicon carbide crystal, thereby leaving a graphene residue on the silicon carbide crystal.

11. The method of claim 10 , wherein the vacuum comprises a vacuum of at least 10 −4 Torr and wherein the temperature is at least 1450° C.