Light emitting diode having increased light extraction

1. A light emitting diode (LED) structure comprising:

an epitaxial p-type layer;

an epitaxial n-type layer, light generated by the LED structure exiting through the n-type layer;

an epitaxial active layer between the p-type layer and the n-type layer, wherein the p-layer and the active layer are etched at one or more first areas to expose the n-type layer for connection to an n-electrode, and wherein the one or more first areas create one or more non-light emitting areas;

a metal n-electrode electrically contacting the n-type layer through the one or more first areas;

a transparent conductor layer formed on the p-type layer;

a metal p-electrode formed on the transparent conductor layer and electrically contacting the p-type layer via the transparent conductor layer, the p-electrode being located in the one or more non-light emitting areas so as not to substantially block light;

a dielectric, transparent bonding layer, the p-electrode being within the bonding layer with a portion of the p-electrode being exposed on a surface of the LED structure for connection to a power source, and the n-electrode being above the bonding layer with a portion of the n-electrode being exposed on a surface of the LED structure for connection to the power source;

a transparent support substrate bonded to the p-layer by at least the bonding layer, the transparent support substrate being thicker than the epitaxial layers; and

a reflector opposing a bottom surface of the substrate,

wherein light emitted by the active layer in the direction of the n-type layer exits through the n-type layer, and wherein light emitted by the active layer in the direction of the substrate is reflected upwards by the reflector and exits through the n-type layer.

2. The structure of claim 1 wherein the transparent conductor conducts current in a generally horizontal direction between the p-electrode and the p-type layer.

3. The structure of claim 1 wherein there are a plurality of first areas creating a plurality of non-light emitting areas, wherein portions of the p-electrode are located in the non-light emitting areas.

4. The structure of claim 1 wherein of the exposed portion of the p-electrode is a wire bond terminal, and wherein the exposed portion of the n-electrodes is another wire bond terminal.

5. The structure of claim 1 wherein the reflector is formed on the substrate.

6. The structure of claim 1 wherein the n-electrode is insulated from the p-layer, the active layer, and the transparent conductor by a dielectric.

7. The structure of claim 1 wherein the bonding layer is a resin.

8. The structure of claim 1 wherein the substrate is sapphire.

9. The structure of claim 1 wherein the p-electrode is arranged as strips on the transparent conductor.

10. The structure of claim 1 wherein the n-electrode is arranged as strips on the n-type layer.

11. The structure of claim 1 wherein the n-layer has a roughened surface for increasing light extraction.

12. The structure of claim 1 wherein the n-type layer, the p-type layer, and the active layer are GaN based.

13. A method for forming a light emitting diode (LED) structure comprising:

epitaxially growing an n-type layer over a growth substrate;

epitaxially growing an active layer over the n-type layer;

epitaxially growing a p-type layer over the active layer;

etching away portions of the p-type layer and active layer at one or more first areas to expose the n-type layer for connection to one or more n-electrodes, and wherein the one or more first areas create one or more non-light emitting areas;

forming a metal n-electrode over the exposed portions of the n-type layer, in the one or more first areas, to electrically contact the n-type layer;

providing a first dielectric layer over the n-electrode;

depositing a transparent conductor layer over the p-type layer and the first dielectric layer;

forming a metal p-electrode over the transparent conductor layer to electrically contact the p-type layer, the p-electrode being located in the one or more non-light emitting areas so as not to substantially block light;

depositing a dielectric, transparent bonding layer over the transparent conductor layer and the p-electrode;

bonding a transparent support substrate to the p-type layer via the bonding layer, the transparent support substrate being thicker than the epitaxial layers;

removing at least the growth substrate to expose the n-type layer; and

etching away portions of the n-type layer, the p-type layer, and the active layer to expose a portion of the n-electrode for connection to a power source and expose a portion of the p-electrode for connection to the power source.

14. The method of claim 13 further comprising forming a reflective layer on a bottom surface of the support substrate, wherein light emitted by the active layer in the direction of the n-type layer exits through the n-type layer, and wherein light emitted by the active layer in the direction of the support substrate is reflected upwards by the reflector and exits through the n-type layer.

15. The method of claim 13 further comprising growing a buffer layer between the n-type layer and the growth substrate.

16. The method of claim 13 wherein of the exposed portion of the p-electrodes is a wire bond terminal, and wherein the exposed portion of the n-electrode is a wire bond terminal.

17. The method of claim 13 wherein the bonding layer is a resin.

18. The method of claim 13 wherein the p-electrode is arranged as strips on the transparent conductor.

19. The method of claim 13 wherein the n-electrode is arranged as strips on the n-type layer.