Proximity sensor

1. Method for producing an electronic proximity sensor, having the steps of:

providing a capacitive proximity sensor having a sensor surface, and

coating the sensor surface with a semiconductor layer, the thickness of which is between 10 nm and 100 nm, wherein the coating is achieved by a vacuum process,

wherein the semiconductor layer is a silicon layer or a germanium layer or a layer consisting of silicon and germanium, and

wherein the electronic proximity sensor has a decorative surface with a metallic appearance.

2. The method according to claim 1 , characterized in that the vacuum process comprises at least one of PVD and CVD process.

3. The method of claim 1 , wherein the semiconductor layer is a layer component of a layer system.

4. The method of claim 1 , wherein the semiconductor layer is a layer component of a layer system and the layer system is structured as alternating layer system comprising at least one semiconductor layer and one dielectric layer.

5. The method of claim 4 , wherein the semiconductor layer is a Si-layer and the dielectric layer is a SiO 2 -layer.

6. The method of claim 4 , wherein the semiconductor layer comprises germanium and the dielectric layer is a SiO 2 -layer.

7. The method of claim 1 , wherein a primer of UV acryl lacquer is first applied onto the surface.

8. The method of claim 1 , wherein a top layer of UV acryl lacquer is applied.

9. The method of claim 2 , wherein the vacuum process includes or is magnetron sputtering.

10. The method of claim 6 , wherein germanium and silicon oxide are alternately formed.

11. The method of claim 4 , wherein the one semiconductor layer comprises silicon and germanium combined, and the one dielectric layer comprises silicon oxide.

12. The method of claim 1 , wherein the decorative surface comprises an entire decorative surface.