IP Library Granted Patent US 9,153,437
Granted Patent B2
US 9,153,437 · App. 14/009,000 · Granted Oct 6, 2015

Inorganic nanostructure reactive direct-write and growth

Inventors: Marco Rolandi (Seattle, WA); Hideki Sato (Hino, JP); Stephanie Vasko (Seattle, WA); Michael Brasino (Issaquah, WA); Adnan Kapetanovic (Tukwila, WA); Vamsi Talla (Seattle, WA)
Assignee: University of Washington through its Center for Commercialization
H01L21/02636B81C1/00492B82Y10/00B82Y40/00G03F7/0002H01L21/02532B81C2201/0154H01L21/02656
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Quick Facts
Patent No.
US 9,153,437
App. No.
14/009,000
Granted
Oct 6, 2015
Kind
B2
Abstract

Methods for forming inorganic nanostructures are provided. The methods create the inorganic nanostructures by positioning a writing electrode (e.g., a conductive “stamp”) spaced nanometers above a substrate such that a precursor is intermediate the two. Applying an electric field, a voltage bias, an ionic current, or an electronic current between the writing electrode and the substrate converts the precursor into an inorganic solid material (e.g., a semiconductor such as silicon or germanium) in the area of the writing electrode.

Claims (27)

1. A method of forming a pattern on a substrate, comprising the steps of:

(a) positioning a writing electrode within 500 nm of a substrate surface, wherein the substrate surface is selected from the group consisting of a conductive material, a semiconductive material, and an insulating material that is a thin film covering a conductive or semiconductive material;

wherein a precursor is disposed in contact with the substrate surface, the precursor having a composition configured to provide an inorganic solid material when subjected to an electric field of 10 7 V/m or greater; and

(b) applying an electric field of 10 7 V/m or greater between the substrate surface and the writing electrode, and thereby through the precursor, to provide a printed pattern of the inorganic solid material on the substrate.

2. The method of claim 1 , wherein the writing electrode is a stamp having a relief pattern formed from a conductive material facing the substrate surface, and wherein the printed pattern of the inorganic solid material has the shape of the relief pattern.

3. The method of claim 2 , wherein the stamp comprises a polymer substrate supporting the relief pattern.

4. The method of claim 3 , wherein the polymer substrate is polydimethylsiloxane.

5. The method of claim 2 , wherein the entire printed pattern is formed simultaneously.

6. The method of claim 1 , wherein the writing electrode is scanning-probe microscopy tip.

7. The method of claim 6 , wherein the printed pattern is formed by moving the scanning-probe microscopy tip while applying the electric field in the presence of the precursor.

8. The method of claim 6 , wherein a plurality of scanning-probe microscopy tips are used simultaneously to form the printed pattern.

9. The method of claim 1 , wherein the precursor is a precursor for an inorganic solid material selected from the group consisting of a metal, a semiconductor, and a dielectric.

10. The method of claim 1 , wherein the precursor is a precursor for a single inorganic semiconductor.

11. The method of claim 1 , wherein the precursor is a precursor for a compound inorganic semiconductor.

12. The method of claim 11 , wherein the precursor comprises a first precursor for a first inorganic semiconductor and a second precursor for a second inorganic semiconductor, and wherein the compound inorganic semiconductor formed on the substrate has a composition proportional to the amounts of the first precursor and the second precursor.

13. The method of claim 1 , wherein the precursor comprises one or more dopants that are incorporated into the inorganic solid material.

14. The method of claim 1 , wherein the precursor is selected from the group consisting of a liquid, a gas, a solid, and combinations thereof.

15. The method of claim 1 , wherein the precursor consists of inorganic compounds.

16. The method of claim 1 , wherein the precursor comprises inorganic and organic compounds, such that the inorganic solid includes organic compounds.

17. The method of claim 1 , wherein positioning the writing electrode comprises submerging the writing electrode in a solution of the precursor.

18. The method of claim 17 , wherein the solution of the precursor is contained in a fluid cell.

19. The method of claim 1 , wherein positioning the writing electrode comprises using a piezoelectric device to manipulate the writing electrode, the substrate, or both.

20. The method of claim 1 , wherein the semiconductive substrate or insulating surface is made conductive by shining light on it.

21. The method of claim 1 , wherein the writing electrode is configured to be integrated into a photolithography tool.

22. The method of claim 21 , wherein the photolithography tool is selected from the group consisting of an aligner, a stepper, and any other device that precisely positions the electrode and the substrate.

23. The method of claim 1 , wherein the writing electrode is in contact with the substrate surface.

24. The method of claim 1 , wherein the writing electrode is not in contact with the substrate surface.

Assignments (2)
CONFIRMATORY LICENSE Recorded Apr 24, 2015
From: UNIVERSITY OF WASHINGTON
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 035498/0975 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 28, 2014
From: ROLANDI, MARCO; BRASINO, MICHAEL; KAPETANOVIC, ADNAN; TALLA, VAMSI; VASKO, STEPHANIE; SATO, HIDEKI
To: UNIVERSITY OF WASHINGTON THROUGH ITS CENTER FOR COMMERCIALIZATION
Reel/Frame 032329/0430 →
Continuity (2)
Provisional Application 61469626 · Mar 30, 2011
Related Publication 20140162436A1 · Jun 12, 2014