Chamber cleaning with infrared absorption gas
Methods for conditioning interior surfaces of a process chamber are provided herein. In one embodiment a method of conditioning interior surfaces of a process chamber is provided. The method comprises maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius, providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine (Cl 2 ) and high IR absorption gas, and exposing the process gas to radiant energy to remove residue disposed on interior surfaces of the process chamber.
1. A method of conditioning interior surfaces of a process chamber, comprising:
maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius, wherein the process chamber is susceptorless and includes a substrate support ring for supporting a substrate while exposing a backside of the substrate;
providing a silicon-free process gas to the process chamber at the first pressure and the first temperature, wherein the silicon-free process gas comprises chlorine (Cl 2 ) and hydrogen (H 2 ); and
exposing the silicon-free process gas to infrared radiation to remove residue disposed on interior surfaces of the process chamber via a thermal chemical process, wherein the silicon-free process gas is maintained in a non-plasma state, the exposing the silicon-free process gas to infrared radiation comprises reacting the chlorine (Cl 2 ) with the hydrogen (H 2 ) to form hot HCl, and the infrared radiation is generated by an infrared source positioned below the process chamber.
2. The method of claim 1 , wherein the ratio of chlorine (Cl 2 ) to hydrogen (H 2 ) is greater than 1.
3. The method of claim 1 , wherein the silicon-free process gas comprises about 83 to about 99 percent chlorine (Cl 2 ) and about 1 to about 17 percent hydrogen (H 2 ) by volume.
4. The method of claim 1 , wherein the ratio of hydrogen (H 2 ) to chlorine (Cl 2 ) is greater than 1.
5. The method of claim 4 , wherein the silicon-free process gas comprises about 90 to about 99.9 percent hydrogen (H 2 ) and about 0.1 to about 10 percent chlorine (Cl 2 ) by volume.
6. The method of claim 1 , further comprising:
performing an epitaxial deposition process prior to providing the silicon-free process gas to the process chamber.
7. The method of claim 1 , wherein the residue comprises at least one of silicon (Si) and germanium (Ge).
8. The method of claim 1 , wherein the silicon-free process gas further comprises a carrier gas selected from nitrogen (N 2 ), argon, helium, neon, xenon, and combinations thereof.
9. The method of claim 1 , wherein the reacting the chlorine (Cl 2 ) with the hydrogen (H 2 ) to form hot HCl generates heat, which activates remaining chlorine gas and the HCl formed from the reaction.
10. The method of claim 1 , further comprising removing a substrate from the process chamber prior to providing the silicon-free process gas to the process chamber at the first pressure and the first temperature.
11. A method of conditioning interior surfaces of a process chamber, comprising:
maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius, wherein the process chamber is susceptorless and includes a substrate support ring for supporting a substrate while exposing a backside of the substrate;
providing a silicon-free process gas to the process chamber at the first pressure and the first temperature, wherein the silicon-free process gas comprises chlorine (Cl 2 ) and hydrogen (H 2 ); and
exposing the silicon-free process gas to infrared radiation to remove residue disposed on interior surfaces of the process chamber via a thermal chemical process, wherein the silicon-free process gas is maintained in a non-plasma state, the exposing the silicon-free process gas to infrared radiation comprises reacting the chlorine (Cl 2 ) with the hydrogen (H 2 ) to form hot HCl, and the infrared radiation is generated by an infrared source positioned below the process chamber; and
increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the silicon-free process gas to the process chamber.
12. The method of claim 11 , wherein the second pressure is about 160 to about 300 Torr.
13. The method of claim 12 , further comprising:
decreasing the pressure in the process chamber from the second pressure to a third pressure, wherein the third pressure is about 10 to about 40 Torr.
14. The method of claim 11 , wherein the ratio of hydrogen (H 2 ) to chlorine (Cl 2 ) is greater than 1.
15. The method of claim 14 , wherein the silicon-free process gas comprises about 90 to about 99.9 percent hydrogen (H 2 ) and about 0.1 to about 10 percent chlorine (Cl 2 ) by volume.
16. The method of claim 11 , further comprising:
performing an epitaxial deposition process prior to providing the silicon-free process gas to the process chamber.
17. The method of claim 11 , wherein the residue comprises at least one of silicon (Si) and germanium (Ge).
18. The method of claim 11 , wherein the silicon-free process gas further comprises a carrier gas selected from nitrogen (N 2 ), argon, helium, neon, xenon, and combinations thereof.
19. The method of claim 11 , wherein reacting the chlorine (Cl 2 ) with the hydrogen (H 2 ) to form hot HCl generates heat, which activates remaining chlorine gas, and the HCl formed from the reaction.
20. The method of claim 11 , further comprising removing a substrate from the process chamber prior to providing the silicon-free process gas to the process chamber at the first pressure and the first temperature.