Three terminal PIN diode
View Patent ↗This disclosure describes a switch having a collector, base, emitter, and an intrinsic region between the collector and base. The intrinsic region increases the efficiency of the switch and reduces losses. The collector, base, and emitter each have respective terminals, and an AC component of current passing through the base terminal is greater than an AC component of current passing through the emitter terminal. Additionally, in an on-state a first alternating current between the base and collector terminals is greater than a second alternating current between the collector and emitter terminals. In other words, AC passes primarily between collector and base as controlled by a DC current between the base and emitter.
1. A switch comprising:
a collector having a collector terminal;
an emitter having an emitter terminal;
a base coupled to the emitter at a base-emitter junction, the base having a base terminal; and
an intrinsic region arranged between the base and the collector,
an alternating current source arranged to drive an alternating current between the base terminal and the collector terminal;
a controller configured to apply a direct current from the base to the emitter, an amplitude of the direct current controlling an amplitude of the alternating current passing between the base terminal and the collector terminal.
2. The switch of claim 1 , wherein a PIN junction comprising the base, intrinsic region, and collector, includes one or more doped regions between the intrinsic region and the collector, where the one or more doped regions have a different p or n concentration than the intrinsic region.
3. The switch of claim 1 , wherein a PIN junction comprising the base, intrinsic region, and collector, includes one or more doped regions between the intrinsic region and the base, where the one or more doped regions have a different p or n concentration than the intrinsic region.
4. The switch of claim 1 , wherein the collector is an n-type semiconductor, the base is a p-type semiconductor, and the emitter is an n-type semiconductor.
5. The switch of claim 4 , wherein the emitter comprises an n++ type semiconductor.
6. The switch of claim 5 , wherein the collector comprises an n− type semiconductor.
7. The switch of claim 4 , wherein the collector comprises an n− type semiconductor.
8. The switch of claim 4 , wherein the intrinsic region is not doped.
9. The switch of claim 4 , wherein the intrinsic region is doped, but has a lower p or n concentration than the base.
10. The switch of claim 4 , wherein the collector has a lower p or n concentration than the base.
11. The switch of claim 4 , wherein the emitter has a higher p or n concentration than the base.
12. The switch of claim 1 , wherein the collector is a p-type semiconductor, the base is an n-type semiconductor, and the emitter is a p-type semiconductor.
13. The switch of claim 1 , wherein a breakdown voltage of the intrinsic region is greater than or equal to 1000 V.
14. The switch of claim 1 , wherein in an on-state a base current passes through the base terminal and a magnitude of the alternating current through the base terminal is greater than a magnitude of a direct current component of the base current.
15. The switch of claim 1 , wherein the intrinsic region is dimensioned such that a carrier path length through the intrinsic region between the collector and the base is greater than a carrier path length through the collector.
16. The switch of claim 1 , wherein the emitter has a higher p or n concentration than the collector.
17. A switch comprising:
a collector having a collector terminal;
an emitter having an emitter terminal;
a base having a base terminal, the base being coupled to the emitter via a base-emitter junction; and
an intrinsic region arranged between the base and the collector,
an alternating current loop including an alternating current source, the base terminal, and the collector terminal, and further including an alternating current passing through the base terminal and the collector terminal;
a controller configured to apply a direct current from the base terminal to the emitter terminal, an amplitude of the direct current controlling an amplitude of the alternating current passing through the base terminal and the collector terminal,
wherein an amplitude of the alternating current passing through the base terminal and the collector terminal is greater than an amplitude of alternating current passing through the emitter terminal.
18. The switch of claim 17 , wherein the emitter has a higher p or n concentration than the collector.
19. A switch comprising:
a collector having a collector terminal;
an emitter having an emitter terminal;
a base coupled to the emitter at a base-emitter junction, the base having a base terminal;
an intrinsic region arranged between the base and the collector;
an alternating current source arranged to generate an alternating current between the collector terminal and the base terminal where the alternating current is substantially the same at the base terminal and the collector terminal; and
a controller configured to apply a direct current from the base to the emitter, an amplitude of the direct current controlling an amplitude of the alternating current passing between the base terminal and the collector terminal.
20. The switch of claim 19 , further comprising a biasing circuit comprising:
a first DC source coupled between the emitter terminal and the base terminal;
a second DC source coupled between the collector terminal and the base terminal when the switch is in an off-state and arranged to reverse bias a PIN junction comprising the base, intrinsic region, and collector when the switch is in an off-state.
21. The switch of claim 20 , wherein the first DC source is arranged to reverse bias the emitter-base junction when the switch is in an off-state.
22. The switch of claim 19 , wherein the first DC source is arranged to forward bias the emitter-base junction when the switch is in an on-state.