Magnetic random access memory
A magnetic random access memory is configured as a read/write memory and at least a first section of the magnetic random access memory is configured to be converted to a read only memory.
1. A device, comprising:
a processing unit;
a first memory device electrically coupled to processing unit; and
a second memory device electrically coupled to the first memory device and the processing unit,
wherein the first memory device is configured as a read/write memory and a first section of the first memory device is irreversibly convertible to a read only memory,
wherein the second memory device are configured for read write operation, and
wherein the first and second memory devices are integrated on a single semiconductor chip.
2. The device of claim 1 , wherein the first memory device is configured for magnetic read/write operation and wherein the second memory device is configured for read write operation.
3. The device of claim 1 , wherein the first memory device is an MRAM and wherein the second memory device is an SRAM.
4. The device of claim 1 , wherein a second portion of the first memory device is configured for read write operation.
5. The device of claim 4 , wherein the size of the first portion and the size of the second portion varies at any given time.
6. The device of claim 4 , wherein a sum of the size of the first portion and the size of the second portion is the size of the first memory device.
7. The device of claim 1 , wherein the first portion comprises a set of data or code.
8. The device of claim 1 , wherein the first portion comprises a set of programmable instructions for an algorithm.
9. A semiconductor device, comprising:
a first memory device configured for a partial read write operation; and
a second memory device configured for read write operation, wherein the first memory device is configurable for irreversible conversion to partial read only operation.
10. The semiconductor device of claim 9 , further comprising:
a processing unit for configuring the first memory device for partial read only operation.
11. The semiconductor device of claim 9 , wherein the first memory device comprises a portion for read only operation.
12. The semiconductor device of claim 11 , wherein the portion comprises a set of data or code.
13. The semiconductor device of claim 11 , wherein the portion comprises a set of programmable instructions for an algorithm.
14. The semiconductor device of claim 11 , wherein the portion comprises a first portion and a second portion, and wherein the first portion comprises a first set of data or code, and wherein the second portion comprises a second set of data or code.
15. A method for configuring memory device comprising:
configuring a first memory device for a read write operation and a read only operation such that a conversion from read write operation to read only operation is irreversible; and
configuring a second memory device for a read write operation.
16. The method of claim 15 , wherein configuring the first memory device comprises:
configuring a first portion of the first memory device for read only operation; and
configuring a second portion of the first memory device for read write operation.
17. The method of claim 16 , wherein configuring the first portion comprises:
configuring a first portion of the first memory device from a read write operation to a read only operation.
18. The method of claim 16 , wherein configuring the first portion comprises:
configuring a first portion of the first memory device from a read write operation to a read only operation; and
configuring a second portion of the first memory device for read only operation.
19. The method of claim 16 , wherein configuring the first portion comprises:
storing in the first portion a set of data or code.
20. The method of claim 15 , wherein configuring the first memory device comprises:
configuring a first portion for read only operation and a second portion for read write operation, wherein the first portion and the second portion vary in size at a given time.
21. A data processing system, comprising:
a processing unit; and
a magnetic random access memory comprising a first section configured as a read/write memory and a second section configured to be irreversibly convertible from a read/write memory to a read only memory, wherein the second section of the magnetic random access memory is configured to store customer specific data or code.
22. The data processing system of claim 21 ,
wherein only the customer specific data or code related to a specific customer of the data processing system are stored on the second section of the magnetic random access memory having been converted to read only memory.
23. The data processing system of claim 21 ,
wherein the customer specific data or code are maintained for a predetermined time period on the second section of the magnetic random access memory having been converted to read only memory; and
wherein the customer specific data or code are updated after the predetermined time period.