Image sensors with organic photodiodes and methods for forming the same
Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN-junction interfacial area, which improves the quantum efficiency (QE) of the photodiodes. The organic P-type material is applied in liquid form to fill the trenches. A mixture of P-type materials with different work function values and thickness can be used to meet the desired work function value for the photodiodes.
1. A photodiode, comprising:
a first electrode layer;
an N-type layer, wherein the N-type layer defines a plurality of trenches, wherein the plurality of trenches comprises:
first trenches having respective first lengths disposed in a first direction in a top-down view of the photodiode; and
second trenches disposed across the first trenches and having respective second lengths disposed in a second direction substantially perpendicular to the first direction in the top-down view of the photodiode;
an electron transport layer between the first electrode layer and the N-type layer;
an organic P-type layer over the N-type layer, wherein the organic P-type layer fills the plurality of trenches; and
a second electrode layer over the organic P-type layer.
2. The photodiode of claim 1 , wherein the organic P-type layer is a conjugated polymer.
3. The photodiode of claim 1 , wherein the organic P-type layer is made of a thiophene-based conjugated polymer, benzodithiophene-based conjugated polymer, thieno[3,4-c]pyrrole-4,6-dione (TPD)-based conjugated polymer, diketo-pyrrole-pyrrole (DPP)-based conjugated polymer, bithiazole (BTz)-based conjugated polymers, benzothiadiazole (BT)-based conjugated polymer, thieno[3,2-b]thiophene (TT)-based conjugated polymer, or a combination thereof.
4. The photodiode of claim 1 , wherein the organic P-type layer is made of poly(3-hyxylthiophene) (P3HT).
5. The photodiode of claim 1 , wherein each trench of the plurality of trenches has a rectangular cross-section.
6. The photodiode of claim 1 , wherein an island of the N-type layer is bounded on a first side and a second side by adjacent ones of the first trenches, and wherein the island of the N-type layer is bounded on a third side and a fourth side by adjacent ones of the second trenches.
7. The photodiode of claim 6 , wherein the islands of the N-type layer are rectangular, circular or oval-shaped.
8. The photodiode of claim 1 , wherein the plurality of trenches is defined in a top portion of the N-type layer.
9. The photodiode of claim 1 , wherein the second electrode layer is transparent.
10. The photodiode of claim 1 , further comprising:
a hole transport layer between the organic P-type layer and the second electrode layer, wherein the hole transport layer is transparent.
11. The photodiode of claim 1 , wherein the photodiode is a front-side image sensor.
12. A photodiode, comprising:
a first electrode layer;
a first plurality of trenches extending into the first electrode layer;
an N-type layer, wherein the N-type layer extends along sidewalls and over a bottom surface of the first plurality of trenches;
an organic P-type layer over the N-type layer, wherein the organic P-type layer fills remaining portions of the first plurality of trenches; and
a second electrode layer over the organic P-type layer.
13. The photodiode of claim 12 , further comprising
an electron transport layer between the first electrode layer and the N-type layer, and the electron transport layer forms the first plurality of trenches.
14. The photodiode of claim 12 , further comprising:
a hole transport layer between the organic P-type layer and the second electrode layer, wherein the hole transport layer is transparent.
15. The photodiode of claim 12 , wherein the second electrode layer is transparent, wherein the photodiode is part of a front-side image sensor.
16. A front-side image sensor, comprising:
an organic photodiode comprising an N-type layer defining a plurality of trenches and an organic P-type layer filling the plurality of trenches, wherein the N-type layer comprises:
a first surface forming an interface with the organic P-type layer; and
a non-planar second surface opposite the first surface;
a substrate with devices and interconnect structures, wherein the organic photodiode is over the interconnect structures;
a color filter layer over the organic photodiode; and a micro-lens over the color filter layer.
17. The front-side image sensor of claim 16 , wherein the organic P-type layer forms a PN-junction interface.
18. The photodiode of claim 12 , wherein the organic P-type layer is a conjugated polymer.
19. The photodiode of claim 12 , wherein the first plurality of trenches are defined in the first electrode layer.