Semiconductor device and a method of manufacturing the same
A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.
1. A method of manufacturing a semiconductor device comprising steps of:
(a) forming a semiconductor element in a semiconductor substrate;
(b) forming a first insulating film over the semiconductor element;
(c) forming a pad over the first insulating film;
(d) forming a second insulating film over the pad and the first insulating film such that the second insulating film covers a top surface of the pad and side surfaces of the pad;
(e) forming a third insulating film over the second insulating film;
(f) polishing the third insulating film by a CMP method;
(g) after the step (f), forming a fourth insulating film over the third insulating film, wherein a material of the fourth insulating film is different from materials of the second and third insulating films;
(h) forming an opening which reaches the pad, by etching the second, third, and fourth insulating films; and
(i) forming a bump electrode over the pad and the fourth insulating film, said bump electrode being electrically connected to the pad.
2. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the semiconductor substrate has a pair of long sides and a pair of short sides in planar view;
wherein, in a first direction extending along the pair of long sides, a width of the bump electrode is smaller than a width of the pad, and
wherein, in a second direction extending along the pair of short sides, a width of the bump electrode is larger than the width of the pad.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein the second insulating film is formed of a silicon oxide film.
4. The method of manufacturing a semiconductor device according to claim 3 , wherein the third insulating film is formed of a silicon oxide film.
5. The method of manufacturing a semiconductor device according to claim 4 , wherein the fourth insulating film is formed of a silicon nitride film.
6. The method of manufacturing a semiconductor device according to claim 1 ,
wherein a first wiring, which is electrically connected to the semiconductor element, is formed at the same wiring layer as the pad and
wherein the first wiring is arranged under the bump electrode in a planar view.
7. The method of manufacturing a semiconductor device according to claim 6 , wherein the first wiring constitutes a power line or a signal line.
8. The method of manufacturing a semiconductor device according to claim 7 ,
wherein a dummy pattern, which is not electrically connected to the semiconductor element, is formed at the same wiring layers as the pad, and
wherein the dummy pattern is arranged under the bump electrode in a planar view.
9. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the bump electrode includes a cold film, and
wherein the semiconductor device is an LCD driver for a liquid crystal display.