Optoelectronics assembly and method of making optoelectronics assembly
An electronics assembly includes a semiconductor die assembly, an enclosure affixed to the semiconductor die assembly, the enclosure defining first and second chambers over the semiconductor die assembly, and first and second optical elements mounted in the first and second chambers, respectively. The semiconductor die assembly includes a semiconductor die encapsulated in a molded material, an encapsulation layer located on the top surface of the semiconductor die, and at least one patterned metal layer and at least one dielectric layer over the encapsulation layer. Conductive pillars extend through the encapsulation layer for electrical connection to the semiconductor die. The encapsulation layer blocks optical crosstalk between the first and second chambers. A method is provided for making the electronics assembly.
1. An electronics assembly comprising:
a semiconductor die assembly, comprising:
a semiconductor die encapsulated in a molded material;
one or more conductive pillars on a top surface of the semiconductor die;
an encapsulation layer located over the top surface of the semiconductor die and surrounding the conductive pillars; and
at least one patterned metal layer and at least one dielectric layer over the encapsulation layer;
an enclosure affixed to the semiconductor die assembly, the enclosure defining first and second chambers over the semiconductor die assembly and including a wall between the first and second chambers;
first and second optical elements mounted in the first and second chambers, respectively, and electrically connected to the semiconductor die; and
wherein the encapsulation layer blocks optical crosstalk between the first and second chambers.
2. An electronics assembly as defined in claim 1 , wherein the molded material and the encapsulation layer are formed of the same material.
3. An electronics assembly as defined in claim 1 , wherein the molded material and the encapsulation layer are formed of different materials.
4. An electronics assembly as defined in claim 1 , wherein the conductive pillars have a pillar height above the top surface of the semiconductor die and wherein the encapsulation layer has a thickness equal to the pillar height.
5. An electronics assembly as defined in claim 1 , wherein the first and second optical elements are electrically connected to the semiconductor die by the conductive pillars.
6. An electronics assembly as defined in claim 1 , wherein the first optical element comprises a light source and the second optical element comprises a light sensor.
7. An electronics assembly as defined in claim 6 , wherein the semiconductor die comprises an image sensor processor.
8. An electronics assembly as defined in claim 1 , wherein the enclosure includes a first lens positioned over the first optical element and a second lens positioned over the second optical element.
9. An electronics assembly as defined in claim 1 , wherein a first portion of the semiconductor die is located under the first chamber and a second portion of the semiconductor die is located under the second chamber.
10. An electronics assembly as defined in claim 1 , wherein the semiconductor die assembly further includes conductive vias through the molded material for electrically connecting front and rear surfaces of the molded material.
11. An electronics assembly as defined in claim 1 , wherein the wall between the first and second chambers extends into an opening in the dielectric layer.
12. An electronics assembly as defined in claim 1 , wherein the encapsulation layer is formed of a material that blocks light in an operating wavelength range of the electronics assembly.
13. An electronics assembly as defined in claim 1 , wherein the enclosure is affixed to the semiconductor die assembly by an opaque adhesive that extends over an outer edge of the dielectric layer.
14. The electronics assembly as defined in claim 1 , wherein the semiconductor die comprises a transparent passivation layer and the encapsulation layer blocks light from reaching the transparent passivation layer.
15. A semiconductor die assembly comprising:
a semiconductor die having a transparent passivation layer and being encapsulated in a molded material;
one or more conductive pillars on a top surface of the semiconductor die;
an encapsulation layer located on the top surface of the semiconductor die and surrounding the conductive pillars;
at least one patterned metal layer and at least one dielectric layer over the encapsulation layer; and
wherein the encapsulation layer blocks light from reaching the transparent passivation layer.
16. A semiconductor die assembly as defined in claim 15 , wherein the conductive pillars have a pillar height above the top surface of the semiconductor die and wherein the encapsulation layer has a thickness equal to the pillar height.
17. A semiconductor die assembly as defined in claim 15 , further comprising conductive vias through the molded material for electrically connecting front and rear surfaces of the molded material.
18. A semiconductor die assembly as defined in claim 15 , wherein the encapsulation layer is formed of a material that blocks light in an operating wavelength range of the semiconductor die assembly.