IP Library › Patent Application 14014435
Patent Application
App. No. 14/014,435

Combination CVD/ALD method and source

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Quick Facts
Patent No.
US None
App. No.
14/014,435
Abstract

The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor fed is split in to two paths from a precursor source. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes.

Claims (3)

1 . A method of operating a system having a reactor configured to deposit thin films, said method comprising the steps of;

dividing a flow of a reactant from a reactant source vessel in to two separate paths, and

combining the first and second paths at a point after restriction and prior to entry of a reaction space.