IP Library › Granted Patent US 9,143,243
Granted Patent B2
US 9,143,243 · App. 14/018,434 · Granted Sep 22, 2015

Power module for high/low voltage insulation

Inventors: Shin-Yi Huang (Taichung, TW); Wen-Chih Chen (Hsinchu County, TW); Tao-Chih Chang (Taoyuan County, TW)
Assignee: Industrial Technology Research Institute
H04B10/802H01L24/34H01L2924/15787H01L2924/15788
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Quick Facts
Patent No.
US 9,143,243
App. No.
14/018,434
Granted
Sep 22, 2015
Kind
B2
Abstract

A power module for high/low voltage insulation is provided. The power module includes a first substrate, a second substrate and an insulating substrate. The first substrate includes a first control circuit and a light source, wherein the first control circuit controls the light source to emit light. The second substrate includes a light-sensing part, a second control circuit and a power device. The light-sensing part receives the light of the light source of the first substrate to send a sensing information. The second control circuit correspondingly drives the power device in accordance with the sensing information. The insulating substrate is disposed between the first substrate and second substrate.

Claims (34)

1. A power module for high/low voltage insulation, comprising:

a first substrate including a first control circuit and a light source, wherein the first control circuit controls the light source to emit light;

a second substrate disposed at a side of the first substrate, and the second substrate including:

a power device;

a light-sensing part receiving the light of the light source of the first substrate to send sensing information; and

a second control circuit correspondingly driving the power device in accordance with the sensing information; and

an insulating substrate disposed between the first substrate and second substrate.

2. The power module for high/low voltage insulation according to claim 1 , wherein the first substrate and the second substrate are not electrically connected.

3. The power module for high/low voltage insulation according to claim 1 , wherein a wavelength of the light of the light source is between 300 nm to 1000 nm.

4. The power module for high/low voltage insulation according to claim 1 , wherein the light source is a light emitting diode.

5. The power module for high/low voltage insulation according to claim 1 , wherein the power device comprises a control terminal, a first terminal and a second terminal, and the control terminal of the power device is coupled to the second control circuit.

6. The power module for high/low voltage insulation according to claim 5 , wherein the insulating substrate further comprises a conductive layer located at a side of the insulating substrate adjacent to the second substrate, and the second terminal of the power device is electrically connected to the conductive layer.

7. The power module for high/low voltage insulation according to claim 6 , wherein the second terminal of the power device is connected to the conductive layer of insulating substrate through a first conductive interface, wherein the first conductive interface includes metal glue, metal paste, nano-silver paste, tin or other conductive materials.

8. The power module for high/low voltage insulation according to claim 5 , wherein the power device comprises at least one insulated gate bipolar transistor (IGBT), the control terminal of the power device being a gate of the IGBT, and the first terminal and the second terminal of the power device respectively being an emitter and a collector of the IGBT.

9. The power module for high/low voltage insulation according to claim 5 , further comprising:

a diode having an anode and a cathode, wherein the anode and the cathode are electrically connected to the first terminal and the second terminal of the power device, respectively.

10. The power module for high/low voltage insulation according to claim 1 , wherein an operating voltage of the power device is greater than 10 times an operating voltage of the first substrate.

11. The power module for high/low voltage insulation according to claim 1 , wherein the first substrate or the second substrate are a direct bond copper ceramic substrate, a copper electroplating ceramic substrate or a printed circuit board.

12. The power module for high/low voltage insulation according to claim 1 , wherein the insulating substrate is a ceramic interposer or a glass interposer.

13. The power module for high/low voltage insulation according to claim 1 , wherein the insulating substrate further comprising:

a through hole, wherein the light of the light source of the first substrate is transmitted to the light-sensing part of the second control circuit of the second substrate through the through hole.

14. The power module for high/low voltage insulation according to claim 13 , wherein the insulating substrate further comprising:

a transparent component disposed in the through hole, wherein the light of the light source of the first substrate is transmitted to the light-sensing part of the second control circuit of the second substrate through the transparent component.

15. The power module for high/low voltage insulation according to claim 14 , wherein a length of the transparent component is greater than a thickness of the insulating substrate.

16. The power module for high/low voltage insulation according to claim 14 , wherein a material of the transparent component comprises glass, plastic or other transparent materials.

17. The power module for high/low voltage insulation according to claim 1 , wherein a material of the insulating substrate is a transparent material or a semi-transparent material.

18. The power module for high/low voltage insulation according to claim 17 , wherein the insulating substrate further comprising:

a metal shielding layer located at a side of the insulating substrate adjacent to the first substrate, and the metal shielding layer having a through hole;

wherein the light of the light source of the first substrate is transmitted to the light-sensing part of the second substrate through the through hole and the insulating substrate.

19. The power module for high/low voltage insulation according to claim 1 , further comprising:

a first dielectric layer disposed between the first substrate and the insulating substrate; and

a second dielectric layer disposed between the second substrate and the insulating substrate;

wherein a material of the first dielectric layer or the second dielectric layer is high-molecular material.

20. The power module for high/low voltage insulation according to claim 19 , wherein the high-molecular material comprises silica gel, prepreg, ABF or polymide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2013
From: HUANG, SHIN-YI; CHEN, WEN-CHIH; CHANG, TAO-CHIH
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 031148/0202 →
Priority Claims (1)
TW 102121988 A · Jun 20, 2013 · national
Continuity (1)
Related Publication 20140374629A1 · Dec 25, 2014