Methods of forming electronic elements with ESD protection
View Patent ↗An electrostatic discharge (ESD) protection circuit ( 40 ) is coupled across input-output (I/O) pads ( 21 ) and common terminals ( 24 ) of a circuit core ( 22 ) to protect it from ESD events. The circuit ( 40 ) comprises, a unidirectional ESD clamp ( 23 ) and two or more floating diodes ( 42, 44 ) arranged in parallel opposed configuration in series with the ESD clamp ( 23 ), the combination coupled between the I/O pads ( 21 ) and the reference terminals ( 24 ). In a preferred arrangement, the two strings of opposed parallel coupled diodes ( 42, 44 ) are used with different numbers of diodes in each string. These diodes ( 42, 44 ) operate in forward conduction ( 43, 45 ), so the energy dissipated therein during an ESD event is much reduced compared to a reverse biased diode and they can have smaller area. Signal clipping at the I/O pad ( 21 ) is reduced, less power is dissipated and less chip area is utilized.
1. A method for forming an electronic element, comprising:
providing a substrate on or in which has been formed a circuit core having first and second terminals desired to be protected from electrostatic discharge (ESD) events and an asymmetrical ESD protection device having third and fourth terminals, the substrate having an insulating first surface region;
depositing on the first surface region of the substrate a polycrystalline semiconductor (PSC) layer;
in a first portion of the PSC layer, forming N diodes by localized doping of the PSC layer, wherein the PSC layer has therein N+(N−1) PN junctions of which (N−1) are shorted together;
in a second portion of the PSC layer, forming M diodes by localized doping of the PSC layer, wherein the PSC layer has therein M+(M−1) PN junctions of which (M−1) are shorted together; and
electrically coupling the N diodes and M diodes in opposed parallel configuration between the first terminal of the circuit core and the third terminal of the ESD protection device, and coupling the fourth terminal of the ESD protection device to the second terminal of the circuit core.
2. The method of claim 1 , wherein M≦N.
3. The method of claim 2 , wherein N≦12 and M≦6.
4. The method of claim 1 , wherein the PSC layer is formed by chemical vapor deposition (CVD) or plasma enhanced CVD of a combination thereof.
5. The method of claim 4 , wherein the PSC layer has an initial doping concentration less than that of P and N regions subsequently provided by localized doping thereof to form the PN junctions.
6. A method for forming an electronic element, comprising:
forming a circuit core, an input-output (I/O) terminal, and a common terminal on a semiconductor substrate, wherein the circuit core is coupled between the I/O terminal and the common terminal;
forming at least one substantially asymmetric electro-static discharge (ESD) clamp, wherein the ESD clamp includes first and second terminals, wherein the first terminal is coupled to one of the I/O terminal or the common terminal; and
forming two opposed floating diode strings, each of the diode strings having therein multiple diodes coupled in series, wherein the diode strings are parallel coupled to third and fourth terminals, wherein the third terminal is coupled to the second terminal of the ESD clamp and the fourth terminal is coupled to the other of the I/O terminal or the common terminal, and wherein a first diode string of the two opposed floating diode strings comprises a first plurality of diodes coupled in series, wherein a first diode of the first plurality of diodes includes a first region of a first conductivity type and a first doping density, a second region of the first conductivity type directly adjacent the first region and having a second doping density that is less than the first doping density, and a third region of a second conductivity type directly adjacent the second region, and wherein a second diode of the first plurality of diodes includes a fourth region of the first conductivity type directly adjacent the third region and having the first doping density, a fifth region of the first conductivity type directly adjacent the fourth region and having the second doping density, and a sixth region of the second conductivity type directly adjacent the fifth region, and wherein the third region of the first diode is electrically coupled with the fourth region of the second diode.
7. The method of claim 6 , wherein a first of the two opposed floating diode strings has therein N diodes and a second of the two opposed floating diode strings has therein M diodes, and N≧M.
8. The method of claim 6 , wherein a first of the two opposed floating diode strings has therein N diodes and a second of the two opposed floating diode strings has therein M diodes, and N≧M+1.
9. The method of claim 8 , wherein N≦12.
10. The method of claim 8 , wherein M≦6.
11. The method of claim 6 , wherein the electrostatic discharge clamp and on the two opposed floating diode strings are formed on the semiconductor substrate.
12. The method of claim 11 , wherein the semiconductor substrate is conductive, and the method further comprises forming an insulating layer interposed between the two opposed floating diode strings and the conductive substrate.
13. The method of claim 6 , wherein forming at least one of the two opposed floating diode strings comprises forming a sequence of N and P regions having an odd number of PN junctions.
14. The method of claim 13 , wherein the number of PN junctions is N+(N−1) where N is the number of diodes comprising the diode string.
15. A method of forming an electronic element having an electrostatic discharge (ESD) protection circuit for minimizing clipping of signals presented between an input-output (I/O) terminal and a reference terminal of a circuit core intended to be protected from ESD events occurring between the I/O terminal and reference terminal, the method comprising:
forming an asymmetrical ESD protection device on a semiconductor substrate, wherein the ESD protection device is configured to provide forward conduction for a first current direction and ESD clamping for a second, opposite, current direction; and
serially coupling opposed parallel coupled strings of diodes to the ESD protection device to form a combination, wherein a first of the opposed parallel coupled strings has N serially arranged diodes therein and provides forward conduction for the first current direction and a second of the opposed parallel coupled strings has M serially arranged diodes therein and provides forward conduction for the second, opposite, current direction, and the combination is coupled between the I/O and reference terminals, and wherein a first diode string of the opposed parallel coupled strings of diodes comprises a first plurality of diodes coupled in series, wherein a first diode of the first plurality of diodes includes a first region of a first conductivity type and a first doping density, a second region of the first conductivity type directly adjacent the first region and having a second doping density that is less than the first doping density, and a third region of a second conductivity type directly adjacent the second region, and wherein a second diode of the first plurality of diodes includes a fourth region of the first conductivity type directly adjacent the third region and having the first doping density, a fifth region of the first conductivity type directly adjacent the fourth region and having the second doping density, and a sixth region of the second conductivity type directly adjacent the fifth region, and wherein the third region of the first diode is electrically coupled with the fourth region of the second diode.
16. The method of claim 15 , wherein N≧M.
17. The method of claim 16 , wherein N≧M+1.
18. The method of claim 15 , wherein the circuit core and the first and second diode strings are formed in or on the semiconductor substrate.
19. The method of claim 18 , wherein the diode strings are separated from the semiconductor substrate by an insulating region.