IP Library Granted Patent US 9,305,905
Granted Patent B2
US 9,305,905 · App. 14/020,549 · Granted Apr 5, 2016

Apparatuses and related methods for staggering power-up of a stack of semiconductor dies

Inventor: Trismardawi Tanadi (Sacramento, CA)
Assignee: Micron Technology, Inc.
H01L25/117H01L25/105G06F1/26H01L2924/0002
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Quick Facts
Patent No.
US 9,305,905
App. No.
14/020,549
Granted
Apr 5, 2016
Kind
B2
Abstract

An apparatus including semiconductor dies in a stack. The semiconductor dies are configured to power-up in a staggered manner. Methods for powering up an electronic device include detecting a power-up event with the semiconductor dies in the stack, and responsive to the power-up event, powering up a first semiconductor die in the stack at a first time, and powering up a second semiconductor die in the stack at a second time that is different from the first time.

Claims (70)

1. An apparatus, comprising:

a first semiconductor die including:

at least a first power input; and

a first delay circuit comprising:

a first power-up output;

a first delay element;

a first switch network operably coupled with the first delay element, the first switch network comprising a first plurality of switches; and

a first switch logic including at least one first select input, wherein the first switch logic is configured to cause a first switch of the first switch network to be closed responsive to a predetermined assertion of the at least one first select input to enable a path to generate the first power-up output; and

a second semiconductor die including at least a second power input operably coupled to the at least a first power input, wherein the first semiconductor die and the second semiconductor die form a stack, wherein, responsive to a power-up event, the first semiconductor die is configured to power up at a first time, and the second semiconductor die is configured to power up at a second time that is different from the first time.

2. The apparatus of claim 1 , wherein the second semiconductor die includes:

a second delay circuit comprising:

a second power-up output;

a second delay element;

a second switch network operably coupled with the second delay element; and

a second switch logic including at least one second select input, wherein the second switch logic is configured to enable a path to generate the second power-up output responsive to a predetermined assertion of the at least one second select input.

3. The apparatus of claim 2 , wherein each of the first switch network and the second switch network includes:

a first switch coupled to its corresponding power-up output; and

a second switch operably coupled between an output of its corresponding delay element and power-up output.

4. The apparatus of claim 3 , wherein:

the at least one first select input of the first semiconductor die is operably coupled to the at least a first power input in a configuration to cause the first switch of the first semiconductor die to be closed; and

the at least one second select input of the second semiconductor die is operably coupled to the at least a second power input in a configuration to cause the second switch of the second semiconductor die to be closed.

5. The apparatus of claim 3 , wherein the first delay circuit of the first semiconductor die and the second delay circuit of the second semiconductor die each further comprises another delay element having:

an input operably coupled to the output of its corresponding delay element; and

an output operably coupled to its corresponding power-up output by a third switch of its corresponding switch network.

6. The apparatus of claim 2 , wherein each of the first delay element and the second delay element comprises at least one device selected from the group consisting of a flip-flop, a plurality of flip-flops operably coupled together, and a plurality of inverters coupled in series.

7. The apparatus of claim 2 , wherein each of the first delay element and the second delay element is configured to assert its output a delayed time after its input is asserted, the delayed time comprising a duration selected from the group consisting of less than, substantially equal to, and more than a time required to power up the first semiconductor.

8. An electronic system, comprising:

at least one stack comprising a plurality of semiconductor dies, wherein each semiconductor die of the at least one stack includes a plurality of delay elements that each provides a path to generate a power-up go signal such that the at least one stack is configured to power-up each semiconductor die in a staggered manner over time responsive to a power-up event.

9. The electronic system of claim 8 , further comprising a memory device including the at least one stack.

10. The electronic system of claim 9 , wherein the memory device is a virtual chip enable memory device.

11. The electronic system of claim 9 , further comprising:

a processor;

an input device; and

an output device, wherein the processor is operably coupled to the memory device, the input device, and the output device.

12. The electronic system of claim 8 , wherein each semiconductor die in the stack comprises power-up circuitry with the plurality of delay elements that are identical with the other semiconductor dies in the stack.

13. The electronic system of claim 8 , wherein the plurality of delay elements for each semiconductor die of the at least one stack includes:

a first delay element having a first input coupled to a first path, and a first output coupled to a second path; and

a second delay element having a second input coupled to the second path, and a second output coupled to a third path.

14. The electronic system of claim 13 , wherein:

the first path is coupled to a first switch of a switch network;

the second path is coupled to a second switch of the switch network; and

the third path is coupled to a third switch of the switch network, wherein the first switch, the second switch, and the third switch are configured to be enabled by a select input to generate the power-up go signal through the desired path for each semiconductor die.

15. A method of powering up an electronic device, the method comprising:

detecting a power-up event with semiconductor dies in a stack; and

staggering power-up of each semiconductor die in the stack over time responsive to detecting the power-up event by enabling a different delay path for each semiconductor die of the stack to generate output power signals used for the staggered power up of the stack.

16. The method of claim 15 , wherein staggering power-up of each semiconductor die in the stack over time comprises powering up a first subset of the semiconductor dies in the stack at a first time, and powering up a second subset of the semiconductor dies in the stack at a second time that is different from the first time.

17. The method of claim 15 , wherein staggering power-up of each semiconductor die in the stack over time comprises powering up each semiconductor die at substantially equal time intervals during a same power up process.

18. The method of claim 15 , wherein staggering power-up of each semiconductor die in the stack over time comprises powering up each semiconductor die at varying time intervals during a same power up process.

19. The method of claim 18 , wherein the varying time intervals at least partially overlap during a same power up process.

20. A method of powering up an electronic device, the method comprising:

detecting a power-up event with a plurality of semiconductor dies in a stack of semiconductor dies within a common package;

powering up a first semiconductor die of the stack of semiconductor dies at a first time by enabling a first delay path from among a plurality of different delay paths for the first semiconductor die; and

powering up a second semiconductor die of the stack of semiconductor dies at a second time that is different from the first time by a second delay path from among a plurality of different delay paths for the second semiconductor die.

21. The method of claim 20 , wherein detecting a power-up event with a plurality of semiconductor dies comprises detecting initiation of power at a power supply that is operably coupled to each of the plurality of semiconductor dies in the stack of semiconductor dies.

22. The method of claim 20 , wherein powering up the first semiconductor die of the stack of semiconductor dies at the first time comprises:

monitoring, with the first semiconductor die, a magnitude of a power supply voltage; and

powering up the first semiconductor die responsive to the magnitude of the power supply voltage rising to a pre-determined power-up threshold voltage.

23. The method of claim 20 , wherein powering up the second semiconductor die of the stack of semiconductor dies at the second time comprises:

asserting an input of a delay element within the second delay path responsive to the power-up event; and

powering up the second semiconductor die responsive to an assertion of an output of the delay element.

24. An apparatus, comprising:

a first semiconductor die;

a second semiconductor die; and

a package configured to enclose each of the first semiconductor die and the second semiconductor die, wherein the first semiconductor die is configured to initiate power-up at a first time responsive to a first delay path being enabled from among a plurality of different delay paths for the first semiconductor die, and the second semiconductor die is configured to initiate power-up at a second time responsive to a second delay path being enabled from among a plurality of different delay paths for the second semiconductor die, wherein the second time is different from the first time.

25. The apparatus of claim 24 , further comprising:

a substrate enclosed by the package, wherein the first semiconductor die and the second semiconductor die are disposed on the substrate.

26. The apparatus of claim 25 , wherein the first semiconductor die and the second semiconductor die are disposed on the substrate in a configuration selected from the group consisting of:

the first semiconductor die and the second semiconductor die are each disposed on a first side of the substrate;

the first semiconductor die is secured to the first side of the substrate, and the second semiconductor die is disposed on a second, opposing side of the substrate; and

at least one of the first semiconductor die and the second semiconductor die is configured in a stack comprising a plurality of semiconductor dies, the stack disposed on the substrate.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2013
From: TANADI, TRISMARDAWI
To: MICRON TECHNOLOGY, INC.
Reel/Frame 031154/0750 →
Continuity (1)
Related Publication 20150070056A1 · Mar 12, 2015