IP Library Granted Patent US 9,144,879
Granted Patent B2
US 9,144,879 · App. 14/021,413 · Granted Sep 29, 2015

Planarization method and planarization apparatus

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Quick Facts
Patent No.
US 9,144,879
App. No.
14/021,413
Granted
Sep 29, 2015
Kind
B2
Abstract

According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.

Claims (14)

1. A planarization method comprising:

planarizing a work surface of a work piece by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, the solid plate containing a solid acidic catalyst, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate,

wherein the catalyst is an acidic cation exchanger having a functioning group with an acid dissociation constant of 1.0×10 −3 or less.

2. The planarization method according to claim 1 , wherein the cation exchanger includes a carboxyl group.

3. The planarization method according to claim 1 ,

wherein a pH of the process liquid is 7 or lower.

4. The planarization method according to claim 1 ,

wherein the process liquid is a sodium fluoride aqueous solution, a potassium fluoride aqueous solution, an ammonium fluoride aqueous solution or a mixed solution of the above and a hydrogen fluoride aqueous solution.

5. The planarization method according to claim 1 ,

wherein temperatures of the work surface of the work piece and the surface of the solid plate, which are in contact or extremely close proximity with one another, is raised.

6. The planarization method according to claim 1 ,

wherein hydrogen ions are adsorbed onto the surface of the solid plate by immersion in an acidic solution before planarization of the work surface of the work piece.

7. The planarization method according to claim 1 ,

wherein the process liquid is supplied to the surface of the solid plate from a supply port.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 8, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 042940/0399 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2013
From: GAWASE, AKIFUMI; MATSUI, YUKITERU; MINAMIHABA, GAKU; EDA, HAJIME
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 031388/0809 →