Method of manufacturing semiconductor device having field plate electrode
According to one embodiment, in a method of a semiconductor device, a trench is formed in the direction of a lower surface from an upper surface of a semiconductor layer. A first insulating film is formed to cover an inner surface of the trench. An electrode material is formed to fill the trench and cover the upper surface of the semiconductor layer. The electrode material is selectively removed except a portion of the electrode material to fill the trench and a portion of the electrode material to cover an opening of the trench. The first insulating film to cover an upper portion of the trench is removed. The portions of the electrode material to fill the trench and cover the opening of the trench are etched back to form a first electrode at a lower portion of the trench.
1. A method of manufacturing a semiconductor device, comprising:
forming a trench in the direction of a lower surface from an upper surface of a semiconductor layer;
forming a first insulating film to cover an inner surface of the trench and the upper surface of the semiconductor layer;
forming an electrode material to cover the first insulating film;
selectively removing the electrode material except a portion of the electrode material to fill the trench and a portion of the electrode material to cover an opening of the trench;
removing a portion of the first insulating film on the upper surface of the semiconductor layer, and a portion of the first insulating film in the trench;
etching back the portion of the electrode material which covers the opening of the trench and the portion of the electrode material to fill the trench to form a first electrode at an lower portion of the trench;
forming a second insulating film to cover an inner surface of the upper portion of the trench, and a third insulating film to cover an end portion of the first electrode exposed from the first insulating film at the upper portion of the trench; and
forming a second electrode above the first electrode through the third insulating film.
2. The method of manufacturing the semiconductor device according to claim 1 , wherein the second insulating film is formed by thermally oxidizing the semiconductor layer, and the third insulating film is formed by thermally oxidizing the first electrode.
3. The method of manufacturing the semiconductor device according to claim 1 , wherein
the first insulating film is formed by thermally oxidizing the semiconductor layer.
4. The method of manufacturing the semiconductor device according to claim 2 , wherein
the first insulating film is formed by thermally oxidizing the semiconductor layer.
5. The method of manufacturing the semiconductor device according to claim 1 , wherein
the electrode material is polycrystalline silicon.
6. The method of manufacturing the semiconductor device according to claim 2 , wherein
the electrode material is polycrystalline silicon.
7. The method of manufacturing the semiconductor device according to claim 3 , wherein
the electrode material is polycrystalline silicon.
8. The method of manufacturing the semiconductor device according to claim 1 , wherein
a width of the portion of the electrode material to cover the opening of the trench is equal to or larger than a width of the opening.
9. The method of manufacturing the semiconductor device according to claim 2 , wherein
a width of the portion of the electrode material to cover the opening of the trench is equal to or larger than a width of the opening.
10. The method of manufacturing the semiconductor device according to claim 3 , wherein
a width of the portion of the electrode material to cover the opening of the trench is equal to or larger than a width of the opening.
11. The method of manufacturing the semiconductor device according to claim 4 , wherein
a width of the portion of the electrode material to cover the opening of the trench is equal to or larger than a width of the opening.
12. The method of manufacturing the semiconductor device according to claim 1 , wherein
the first insulating film is thicker than the second insulating film.