Plasma processing apparatus and analyzing apparatus
View Patent ↗An etching apparatus calculates an emission intensity in the vicinity of each of a plurality of wavelengths, at which a specified element should emit light, from information indicating light emission measured by an optical emission spectroscope during etching processing and, if it is determined that the calculated emission intensity information and emission intensity information stored in a storage unit are similar, extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element.
1. A plasma processing apparatus comprising:
a processing chamber configured for plasma etching processing for a wafer;
an optical emission spectroscope that measures light emission of plasma during the plasma etching processing; and
an analysis unit that includes a storage unit and an operation unit, the storage unit storing, in advance, information about emission intensities at a plurality of wavelengths of light emitted by a predetermined element, wherein:
the operation unit calculates an emission intensity in a vicinity of each of a plurality of wavelengths to be emitted by a specified element, based on information indicating light emission measured by the optical emission spectroscope during the plasma etching processing,
the operation unit determines an order of wavelengths in descending order of calculated respective emission intensity levels,
the operation unit obtains a difference between the order determined by the operation unit and the order of wavelengths in descending order of the respective emission intensity levels stored in advance in the storage unit, and
based at least in part on the difference being smaller than a predetermined value, the operation unit extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element.
2. The plasma processing apparatus according to claim 1 , wherein
the operation unit associates the calculated emission intensities with information indicating an inspection result or a measured shape size of the wafer, for which the plasma etching processing is performed, and outputs the associated information.
3. The plasma processing apparatus according to claim 2 , wherein
the operation unit performs statistical processing for information indicating the inspection result or the measured shape size of a plurality of wafers.
4. The plasma processing apparatus according to claim 1 , wherein
the operation unit outputs the extracted wavelength and the corresponding element in a graph indicating the light emission measured by the optical emission spectroscope.
5. The plasma processing apparatus according to claim 1 , wherein
the operation unit outputs the wavelength corresponding to the calculated emission intensity and the element in association with information about emission intensities measured according to a number of plasma etching processing executions.
6. A plasma processing apparatus comprising:
a processing chamber configured for plasma etching processing of a wafer;
an optical emission spectroscope that measures light emission of plasma during the plasma etching processing; and
an analysis unit that includes a storage unit and an operation unit, the storage unit storing, in advance, information about emission intensities at a plurality of wavelengths of light emitted by a predetermined element and an order of the wavelengths in descending order of the respective emission intensity levels, wherein:
the operation unit calculates an emission intensity in a vicinity of each of a plurality of wavelengths to be emitted by a specified element based on information indicating light emission measured by the optical emission spectroscope during the plasma etching processing,
the operation unit determines an order of wavelengths in descending order of the respective calculated emission intensity levels,
the operation unit obtains a difference between the order determined by the operation unit and the order stored in advance in the storage unit, and
based at least in part on the difference being smaller than a predetermined value, the operation unit extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element.
7. The plasma processing apparatus according to claim 6 , wherein
the operation unit associates the calculated emission intensities with information indicating an inspection result or a measured shape size of the wafer for which the plasma etching processing is performed, and outputs the associated information.
8. The plasma processing apparatus according to claim 6 , wherein
the operation unit outputs the extracted wavelength and the corresponding element in a graph indicating the light emission measured by the optical emission spectroscope.
9. The plasma processing apparatus according to claim 6 , wherein
the operation unit outputs the wavelength corresponding to the calculated emission intensity and the element in association with information about emission intensities measured according to a number of plasma etching processing executions.