Multilayer high voltage isolation barrier in an integrated circuit
A semiconductor package is provided that has a transformer formed within a multilayer dielectric laminate substrate. The transformer has a first inductor coil formed in one or more dielectric laminate layers of the substrate, a second inductor coil formed in one or more dielectric laminate layers of the substrate, and an isolation barrier comprising two or more dielectric laminate layers of the multilayer substrate positioned between the first inductor coil and the second inductor coil. The transformer may be mounted on a lead frame along with one or more integrated circuits and molded into a packaged isolation device.
1. A semiconductor package comprising:
a transformer formed within a multilayer dielectric laminate substrate, wherein the transformer comprises:
a first inductor coil formed in one or more dielectric laminate layers of the substrate;
a second inductor coil formed in one or more dielectric laminate layers of the multilayer substrate; and
an isolation barrier comprising two or more dielectric laminate layers as inner layers of the substrate comprising Bismaleimide Triazine (BT) positioned between the first inductor coil and the second inductor coil.
2. The semiconductor package of claim 1 , further comprising:
a first set of terminals formed in a top dielectric laminate layer of the substrate coupled to the first inductor coil; and
a second set of terminals formed in the top dielectric laminate of the substrate coupled to the second inductor coil by a set of vias that are contained within the inner layers, wherein each via of the set of vias comprise blind or buried vias, whereby voltage breakdown is maximized.
3. The semiconductor package of claim 2 , further comprising:
a metal leadframe having a split die attachment pad (DAP) configured to support the transformer; and
a first integrated circuit (IC) mounted on a portion of the split DAP.
4. The semiconductor package of claim 3 , further comprising a second integrated circuit mounted on a separate portion of the split DAP.
5. The semiconductor package of claim 3 , further comprising mold compound that encapsulates the transformer and the first IC.
6. The semiconductor package of claim 3 , wherein the inductor coil placement is constrained to avoid electromagnetic interference from the leadframe metal.
7. The semiconductor package of claim 2 , wherein the leadframe is constrained to not have any metal in proximity to the first inductor coil or to the second inductor coil.
8. The transformer of claim 1 , wherein the first inductor coil and the second inductor coil are constrained to be not present on a plurality of bottom-most metal layers closest to a leadframe die attachment pad DAP.
9. A semiconductor package comprising:
a transformer formed within a multilayer dielectric laminate substrate, wherein the transformer comprises:
a first inductor coil formed in one or more dielectric laminate layers of the substrate;
a second inductor coil formed in one or more dielectric laminate layers of the multilayer substrate; and
an isolation barrier comprising two or more dielectric laminate layers of the substrate positioned between the first inductor coil and the second inductor con, wherein the first inductor coil has a thickness greater than 12 um.
10. A semiconductor package comprising:
a leadframe having a split die attachment pad (DAP);
a first integrated circuit (IC) mounted on a first portion of the split DAP; and
an isolation transformer mounted to span the split DAP, wherein the transformer comprises a multilayer dielectric laminate substrate, wherein the transformer has a multilayer laminate isolation barrier of Bismaleimide Triazine (BT).
11. The semiconductor package of claim 10 , further comprising a second integrated circuit mounted on a separate portion of the split DAP.
12. The semiconductor package of claim 10 , further comprising mold compound that encapsulates the transformer and the first IC.
13. The semiconductor package of claim 10 , wherein the transformer comprises:
a first inductor coil formed in one or more dielectric laminate layers of the substrate;
a second inductor coil formed in one or more dielectric laminate layers of the multilayer substrate; and
wherein the isolation barrier comprises two or more dielectric laminate layers of the substrate positioned between the first inductor coil and the second inductor coil.
14. The semiconductor package of claim 13 , wherein the leadframe is constrained to not have any metal in proximity to the first inductor coil or to the second inductor coil.
15. The semiconductor package of claim 13 , further comprising:
a set of vias coupling the portions of the split DAP wherein each via of the set of vias comprise blind or buried vias that are contained within the inner layers of the isolation barrier, whereby voltage breakdown is maximized.